Copper chemical mechanical polishing method

The invention discloses a copper chemical mechanical polishing method so as to remove copper residue which is hard to clean in a metal-dielectric medium-metal (MIM) structure. The method comprises the following steps: firstly, putting a wafer with the MIM structure on a first grinding pad for rough...

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Bibliographische Detailangaben

1. Verfasser:	NIU XIAOHAO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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