Finfet with two independent gates and method for fabricating the same

A FinFET (100) comprises a fin-shaped layer-section (116) of a single-crystalline active semiconductor layer (104) extending on an insulating substrate layer (106) along a longitudinal fin direction between, a source layer-section (122), and a drain layer-section (124) of the single-crystalline acti...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CORONEL PHILIPPE, MULLER MARKUS GERHARD ANDREAS
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!