Method of forming a transistor having multiple types of schottky junctions

Method of forming a transistor having multiple types of schottky junctions

A gate electrode is formed overlying a substrate. A first angled metal implant is performed at a first angle into the substrate followed by performing a second angled metal implant at a second angle. The first angled metal implant and the second angled metal implant form a first current electrode an...

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1. Verfasser: MIN BYOUNG W
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Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description A gate electrode is formed overlying a substrate. A first angled metal implant is performed at a first angle into the substrate followed by performing a second angled metal implant at a second angle. The first angled metal implant and the second angled metal implant form a first current electrode and a second current electrode. Each of the first current electrode and the second current electrode has at least two regions of differing metal composition. A metal layer is deposited overlying the gate electrode, the first current electrode and the second current electrode. The metal layer is annealed to form two Schottky junctions in each of the first current electrode and the second current electrode. The two Schottky junctions have differing barrier levels.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN101675526BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN101675526BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN101675526BB3</originalsourceid><addsrcrecordid>eNrjZPDyTS3JyE9RyE9TSMsvys3MS1dIVCgpSswrziwuyS9SyEgsA4nlluaUZBbkpCqUVBakFoNUFydn5JeUZFcqZJXmJZdk5ucV8zCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeGc_QwNDM3NTUyMzJydjohQBAL-XNiY</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method of forming a transistor having multiple types of schottky junctions</title><source>esp@cenet</source><creator>MIN BYOUNG W</creator><creatorcontrib>MIN BYOUNG W</creatorcontrib><description>A gate electrode is formed overlying a substrate. A first angled metal implant is performed at a first angle into the substrate followed by performing a second angled metal implant at a second angle. The first angled metal implant and the second angled metal implant form a first current electrode and a second current electrode. Each of the first current electrode and the second current electrode has at least two regions of differing metal composition. A metal layer is deposited overlying the gate electrode, the first current electrode and the second current electrode. The metal layer is annealed to form two Schottky junctions in each of the first current electrode and the second current electrode. The two Schottky junctions have differing barrier levels.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20120321&amp;DB=EPODOC&amp;CC=CN&amp;NR=101675526B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20120321&amp;DB=EPODOC&amp;CC=CN&amp;NR=101675526B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MIN BYOUNG W</creatorcontrib><title>Method of forming a transistor having multiple types of schottky junctions</title><description>A gate electrode is formed overlying a substrate. A first angled metal implant is performed at a first angle into the substrate followed by performing a second angled metal implant at a second angle. The first angled metal implant and the second angled metal implant form a first current electrode and a second current electrode. Each of the first current electrode and the second current electrode has at least two regions of differing metal composition. A metal layer is deposited overlying the gate electrode, the first current electrode and the second current electrode. The metal layer is annealed to form two Schottky junctions in each of the first current electrode and the second current electrode. The two Schottky junctions have differing barrier levels.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPDyTS3JyE9RyE9TSMsvys3MS1dIVCgpSswrziwuyS9SyEgsA4nlluaUZBbkpCqUVBakFoNUFydn5JeUZFcqZJXmJZdk5ucV8zCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeGc_QwNDM3NTUyMzJydjohQBAL-XNiY</recordid><startdate>20120321</startdate><enddate>20120321</enddate><creator>MIN BYOUNG W</creator><scope>EVB</scope></search><sort><creationdate>20120321</creationdate><title>Method of forming a transistor having multiple types of schottky junctions</title><author>MIN BYOUNG W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN101675526BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MIN BYOUNG W</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MIN BYOUNG W</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method of forming a transistor having multiple types of schottky junctions</title><date>2012-03-21</date><risdate>2012</risdate><abstract>A gate electrode is formed overlying a substrate. A first angled metal implant is performed at a first angle into the substrate followed by performing a second angled metal implant at a second angle. The first angled metal implant and the second angled metal implant form a first current electrode and a second current electrode. Each of the first current electrode and the second current electrode has at least two regions of differing metal composition. A metal layer is deposited overlying the gate electrode, the first current electrode and the second current electrode. The metal layer is annealed to form two Schottky junctions in each of the first current electrode and the second current electrode. The two Schottky junctions have differing barrier levels.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method of forming a transistor having multiple types of schottky junctions
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-15T23%3A43%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MIN%20BYOUNG%20W&rft.date=2012-03-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN101675526BB%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true