Method for removing residual defects
The invention provides a method for removing residual defects, which comprises the steps: step 1, a semiconductor structure is provided and has a contact window filled with metal; step 2, a metal layer is settled on the semiconductor structure again; and step 3, chemical and mechanical grinding trea...
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| creator | LIU ZHANGAN CHEN LIXUAN |
| description | The invention provides a method for removing residual defects, which comprises the steps: step 1, a semiconductor structure is provided and has a contact window filled with metal; step 2, a metal layer is settled on the semiconductor structure again; and step 3, chemical and mechanical grinding treatment is performed to the settled metal layer. The method has the advantages that before chemical and mechanical grinding, a metal film is settled newly, and a defect formed in a back etching process is completely covered, so that the residual granules of nano level SiO2 in grinding fluid are avoided as much as possible so as to achieve the purpose of improving product defects. Moreover, the method is simple and easy, only needs to be added with a procedure for avoiding the generation of defects and has higher utility value. |
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The method has the advantages that before chemical and mechanical grinding, a metal film is settled newly, and a defect formed in a back etching process is completely covered, so that the residual granules of nano level SiO2 in grinding fluid are avoided as much as possible so as to achieve the purpose of improving product defects. Moreover, the method is simple and easy, only needs to be added with a procedure for avoiding the generation of defects and has higher utility value.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20091021&DB=EPODOC&CC=CN&NR=101562147A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20091021&DB=EPODOC&CC=CN&NR=101562147A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIU ZHANGAN</creatorcontrib><creatorcontrib>CHEN LIXUAN</creatorcontrib><title>Method for removing residual defects</title><description>The invention provides a method for removing residual defects, which comprises the steps: step 1, a semiconductor structure is provided and has a contact window filled with metal; step 2, a metal layer is settled on the semiconductor structure again; and step 3, chemical and mechanical grinding treatment is performed to the settled metal layer. The method has the advantages that before chemical and mechanical grinding, a metal film is settled newly, and a defect formed in a back etching process is completely covered, so that the residual granules of nano level SiO2 in grinding fluid are avoided as much as possible so as to achieve the purpose of improving product defects. Moreover, the method is simple and easy, only needs to be added with a procedure for avoiding the generation of defects and has higher utility value.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFDxTS3JyE9RSMsvUihKzc0vy8xLBzKKM1NKE3MUUlLTUpNLinkYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSbyzn6GBoamZkaGJuaMxMWoAEJEmxw</recordid><startdate>20091021</startdate><enddate>20091021</enddate><creator>LIU ZHANGAN</creator><creator>CHEN LIXUAN</creator><scope>EVB</scope></search><sort><creationdate>20091021</creationdate><title>Method for removing residual defects</title><author>LIU ZHANGAN ; CHEN LIXUAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN101562147A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2009</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LIU ZHANGAN</creatorcontrib><creatorcontrib>CHEN LIXUAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LIU ZHANGAN</au><au>CHEN LIXUAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for removing residual defects</title><date>2009-10-21</date><risdate>2009</risdate><abstract>The invention provides a method for removing residual defects, which comprises the steps: step 1, a semiconductor structure is provided and has a contact window filled with metal; step 2, a metal layer is settled on the semiconductor structure again; and step 3, chemical and mechanical grinding treatment is performed to the settled metal layer. The method has the advantages that before chemical and mechanical grinding, a metal film is settled newly, and a defect formed in a back etching process is completely covered, so that the residual granules of nano level SiO2 in grinding fluid are avoided as much as possible so as to achieve the purpose of improving product defects. Moreover, the method is simple and easy, only needs to be added with a procedure for avoiding the generation of defects and has higher utility value.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Method for removing residual defects |
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