Organic non-volatile memory material and memory device

The invention provides an organic nonvolatile memory material, which comprises nano particles uniformly dispersed in the first macromolecules. The metal core of the nano particle is coated through the second macromolecule to form a core-shell structure. The first macromolecule and the second macromo...

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Hauptverfasser:	CHEN JUNRONG, FAN RUIFEN, DING QING, ZHAN YIREN, HUANG GUIWU, LIN HENGTIAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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creator	CHEN JUNRONG FAN RUIFEN DING QING ZHAN YIREN HUANG GUIWU LIN HENGTIAN
description	The invention provides an organic nonvolatile memory material, which comprises nano particles uniformly dispersed in the first macromolecules. The metal core of the nano particle is coated through the second macromolecule to form a core-shell structure. The first macromolecule and the second macromolecule can be formed by identical monomers through polymerization, and the polymerization degree of the first macromolecule is larger than the polymerization degree of the second macromolecule. Because the nonvolatile memory material has good uniformity, the electrical property performance of the memorizer can be stably displayed, such as the repeatable read frequency, the holding time of the data, and the on/off ratio of low voltage, low write current to high current.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN101330128A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN101330128A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN101330128A3</originalsourceid><addsrcrecordid>eNrjZDDzL0pPzMtMVsjLz9Mty89JLMnMSVXITc3NL6pUyE0sSS3KTMxRSMxLgYmlpJZlJqfyMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JJ4Zz9DA0NjYwNDIwtHY2LUAACjuC2C</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Organic non-volatile memory material and memory device</title><source>esp@cenet</source><creator>CHEN JUNRONG ; FAN RUIFEN ; DING QING ; ZHAN YIREN ; HUANG GUIWU ; LIN HENGTIAN</creator><creatorcontrib>CHEN JUNRONG ; FAN RUIFEN ; DING QING ; ZHAN YIREN ; HUANG GUIWU ; LIN HENGTIAN</creatorcontrib><description>The invention provides an organic nonvolatile memory material, which comprises nano particles uniformly dispersed in the first macromolecules. The metal core of the nano particle is coated through the second macromolecule to form a core-shell structure. The first macromolecule and the second macromolecule can be formed by identical monomers through polymerization, and the polymerization degree of the first macromolecule is larger than the polymerization degree of the second macromolecule. Because the nonvolatile memory material has good uniformity, the electrical property performance of the memorizer can be stably displayed, such as the repeatable read frequency, the holding time of the data, and the on/off ratio of low voltage, low write current to high current.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; SEMICONDUCTOR DEVICES ; STATIC STORES</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20081224&DB=EPODOC&CC=CN&NR=101330128A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20081224&DB=EPODOC&CC=CN&NR=101330128A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHEN JUNRONG</creatorcontrib><creatorcontrib>FAN RUIFEN</creatorcontrib><creatorcontrib>DING QING</creatorcontrib><creatorcontrib>ZHAN YIREN</creatorcontrib><creatorcontrib>HUANG GUIWU</creatorcontrib><creatorcontrib>LIN HENGTIAN</creatorcontrib><title>Organic non-volatile memory material and memory device</title><description>The invention provides an organic nonvolatile memory material, which comprises nano particles uniformly dispersed in the first macromolecules. The metal core of the nano particle is coated through the second macromolecule to form a core-shell structure. The first macromolecule and the second macromolecule can be formed by identical monomers through polymerization, and the polymerization degree of the first macromolecule is larger than the polymerization degree of the second macromolecule. Because the nonvolatile memory material has good uniformity, the electrical property performance of the memorizer can be stably displayed, such as the repeatable read frequency, the holding time of the data, and the on/off ratio of low voltage, low write current to high current.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDzL0pPzMtMVsjLz9Mty89JLMnMSVXITc3NL6pUyE0sSS3KTMxRSMxLgYmlpJZlJqfyMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JJ4Zz9DA0NjYwNDIwtHY2LUAACjuC2C</recordid><startdate>20081224</startdate><enddate>20081224</enddate><creator>CHEN JUNRONG</creator><creator>FAN RUIFEN</creator><creator>DING QING</creator><creator>ZHAN YIREN</creator><creator>HUANG GUIWU</creator><creator>LIN HENGTIAN</creator><scope>EVB</scope></search><sort><creationdate>20081224</creationdate><title>Organic non-volatile memory material and memory device</title><author>CHEN JUNRONG ; FAN RUIFEN ; DING QING ; ZHAN YIREN ; HUANG GUIWU ; LIN HENGTIAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN101330128A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2008</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHEN JUNRONG</creatorcontrib><creatorcontrib>FAN RUIFEN</creatorcontrib><creatorcontrib>DING QING</creatorcontrib><creatorcontrib>ZHAN YIREN</creatorcontrib><creatorcontrib>HUANG GUIWU</creatorcontrib><creatorcontrib>LIN HENGTIAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHEN JUNRONG</au><au>FAN RUIFEN</au><au>DING QING</au><au>ZHAN YIREN</au><au>HUANG GUIWU</au><au>LIN HENGTIAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Organic non-volatile memory material and memory device</title><date>2008-12-24</date><risdate>2008</risdate><abstract>The invention provides an organic nonvolatile memory material, which comprises nano particles uniformly dispersed in the first macromolecules. The metal core of the nano particle is coated through the second macromolecule to form a core-shell structure. The first macromolecule and the second macromolecule can be formed by identical monomers through polymerization, and the polymerization degree of the first macromolecule is larger than the polymerization degree of the second macromolecule. Because the nonvolatile memory material has good uniformity, the electrical property performance of the memorizer can be stably displayed, such as the repeatable read frequency, the holding time of the data, and the on/off ratio of low voltage, low write current to high current.</abstract><oa>free_for_read</oa></addata></record>
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
title	Organic non-volatile memory material and memory device
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