Semiconductor SOI device

The invention relates to a method of manufacturing a semiconductor device (10) with a substrate (11) and a semiconductor body (12) comprising silicon which is provided with at least one semiconductor element (T), wherein an epitaxial semiconductor layer (1) comprising silicon is grown on top of a fi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SCHLIGTENHORST HOLGER, VAN GEFFEN MARC, EUEN WOLFGANG, BAUER RAINER
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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