KTP crystal growth method suitable for PPKTP device production
The invention discloses a KTP crystal growth method suitable for manufacturing a PPKTP device. The method comprises the following steps that: A) a long X-direction platy seed crystal is manufactured, a seed plate is cut along an XZ plane in the obtained longest X-direction KTP original crystal blank...
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| creator | XIAO YABO WANG GUOYING GE SHIYAN SU ZHENZHEN HUANG CHAOEN SHEN DEZHONG HE TINGQIU GAO SHANHU WANG ZHONG HU YONGLAN SHI RUIZE YIN LIJUN |
| description | The invention discloses a KTP crystal growth method suitable for manufacturing a PPKTP device. The method comprises the following steps that: A) a long X-direction platy seed crystal is manufactured, a seed plate is cut along an XZ plane in the obtained longest X-direction KTP original crystal blank, an XY plane is processed at the longest X-direction position perpendicular to the Z direction, the XZ plane on the two ends of the X-direction center line is chamfered along the X-direction center line on the XY plane, the range of the formed vertex angle alpha is more than 0 degree and less than or equal to 180 degrees, and a beveling surface is ground and is taken as a seed crystal growth plane; and B) the seed crystal is immersed into a melting solution to cultivate according to the growth plane of the seed crystal, and the growth of the crystal is performed. The method utilizes the long X-direction line seed crystal to control the speed rate of the selective growth in the crystal growth process, and further p |
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The method comprises the following steps that: A) a long X-direction platy seed crystal is manufactured, a seed plate is cut along an XZ plane in the obtained longest X-direction KTP original crystal blank, an XY plane is processed at the longest X-direction position perpendicular to the Z direction, the XZ plane on the two ends of the X-direction center line is chamfered along the X-direction center line on the XY plane, the range of the formed vertex angle alpha is more than 0 degree and less than or equal to 180 degrees, and a beveling surface is ground and is taken as a seed crystal growth plane; and B) the seed crystal is immersed into a melting solution to cultivate according to the growth plane of the seed crystal, and the growth of the crystal is performed. 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The method comprises the following steps that: A) a long X-direction platy seed crystal is manufactured, a seed plate is cut along an XZ plane in the obtained longest X-direction KTP original crystal blank, an XY plane is processed at the longest X-direction position perpendicular to the Z direction, the XZ plane on the two ends of the X-direction center line is chamfered along the X-direction center line on the XY plane, the range of the formed vertex angle alpha is more than 0 degree and less than or equal to 180 degrees, and a beveling surface is ground and is taken as a seed crystal growth plane; and B) the seed crystal is immersed into a melting solution to cultivate according to the growth plane of the seed crystal, and the growth of the crystal is performed. The method utilizes the long X-direction line seed crystal to control the speed rate of the selective growth in the crystal growth process, and further p</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | KTP crystal growth method suitable for PPKTP device production |
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