Semi-conductor apparatus and forming method thereof

Semi-conductor apparatus and forming method thereof

Disclosed is a semiconductor; wherein a first grid electrode structure comprises a grid dielectric layer which directly contacts with a substrate, a lower electrode arranged on the grid dielectric layer and an upper electrode arranged on the lower electrode; a second grid electrode structure is comp...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHENG LIWEI, MA GUANGHUA, LIN JIANTING, HUANG YAOCONG, XU ZHEHUA
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Disclosed is a semiconductor; wherein a first grid electrode structure comprises a grid dielectric layer which directly contacts with a substrate, a lower electrode arranged on the grid dielectric layer and an upper electrode arranged on the lower electrode; a second grid electrode structure is composed of a grid dielectric layer which directly contacts with the substrate, and a gate electrode which is arranged on the grid dielectric layer.