Method for insulating AlGaN / GaN HEMT device

The invention discloses an isolation method for an AlGaN/GaN HEMT device, belonging to the microelectronic technical field. The invention aims to avoid material damage in the isolation technology of the prior device by adoption of the method. The method is realized as follows: selective epitaxial gr...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ZHANG JINCHENG, DONG ZUODIAN, HAO YUE, ZHENG PENGTIAN, WANG CHONG, QIN XUEXUE, FENG QIAN, LIU LINJIE
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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