Method for preparing compact cuprum indium selenium film on flexible substrate
A method for preparing compact CuInSe2 thin film on flexible substrates belongs to the photovoltaic cell technical field, which is characterized in that the method comprises the following steps: preparing Cu-In alloy prefabricated film on a metallic titanium flake or on a stainless steel flake by ad...
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creator | NIE HONGBO YANG XIA GUO SHIJU WANG YANLAI WANG YIMIN |
description | A method for preparing compact CuInSe2 thin film on flexible substrates belongs to the photovoltaic cell technical field, which is characterized in that the method comprises the following steps: preparing Cu-In alloy prefabricated film on a metallic titanium flake or on a stainless steel flake by adopting the constant-current co-electrode position method, seleniding the Cu-In alloy prefabricated film in selenium steam, wherein selenylation treatment temperature is 250-300 DEG C, holding time is 30-40min, then obtaining the CIS thin film which is accord with stoichiometry, compacting the CIS thin film, one of the compacting is under room temperature, and pressure intensity is 150-200MPa, the other compacting is that compacting after heating moulds and samples to 40-60DEG C, and pressure intensity is 300-600MPa, carrying out the heat treatment to the compacted CIS thin film, treatment temperature is 400-500 DEG C, holding time is 30-60min, and finally obtaining the compact CIS thin filmwhose surface is smooth. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN101250731BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN101250731BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN101250731BB3</originalsourceid><addsrcrecordid>eNqNjL0KwjAURrM4iPoOF3ehsYh7i-JiJ_eSpl80kD9uEvDxreADOJ0zHM5aDHeUV5zJRKbESIpteJKOPildSNfE1ZMNs12Q4RC-YqzzFAMZh7edHCjXKRdWBVuxMspl7H7ciP318uhvB6Q4Ii9TBJSxH2Qjj6fm3Mqua_-KPrVeN20</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for preparing compact cuprum indium selenium film on flexible substrate</title><source>esp@cenet</source><creator>NIE HONGBO ; YANG XIA ; GUO SHIJU ; WANG YANLAI ; WANG YIMIN</creator><creatorcontrib>NIE HONGBO ; YANG XIA ; GUO SHIJU ; WANG YANLAI ; WANG YIMIN</creatorcontrib><description>A method for preparing compact CuInSe2 thin film on flexible substrates belongs to the photovoltaic cell technical field, which is characterized in that the method comprises the following steps: preparing Cu-In alloy prefabricated film on a metallic titanium flake or on a stainless steel flake by adopting the constant-current co-electrode position method, seleniding the Cu-In alloy prefabricated film in selenium steam, wherein selenylation treatment temperature is 250-300 DEG C, holding time is 30-40min, then obtaining the CIS thin film which is accord with stoichiometry, compacting the CIS thin film, one of the compacting is under room temperature, and pressure intensity is 150-200MPa, the other compacting is that compacting after heating moulds and samples to 40-60DEG C, and pressure intensity is 300-600MPa, carrying out the heat treatment to the compacted CIS thin film, treatment temperature is 400-500 DEG C, holding time is 30-60min, and finally obtaining the compact CIS thin filmwhose surface is smooth.</description><language>chi ; eng</language><subject>APPARATUS THEREFOR ; CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS ANDNON-FERROUS ALLOYS ; CHEMISTRY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; FERROUS OR NON-FERROUS ALLOYS ; METALLURGY ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100728&DB=EPODOC&CC=CN&NR=101250731B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100728&DB=EPODOC&CC=CN&NR=101250731B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NIE HONGBO</creatorcontrib><creatorcontrib>YANG XIA</creatorcontrib><creatorcontrib>GUO SHIJU</creatorcontrib><creatorcontrib>WANG YANLAI</creatorcontrib><creatorcontrib>WANG YIMIN</creatorcontrib><title>Method for preparing compact cuprum indium selenium film on flexible substrate</title><description>A method for preparing compact CuInSe2 thin film on flexible substrates belongs to the photovoltaic cell technical field, which is characterized in that the method comprises the following steps: preparing Cu-In alloy prefabricated film on a metallic titanium flake or on a stainless steel flake by adopting the constant-current co-electrode position method, seleniding the Cu-In alloy prefabricated film in selenium steam, wherein selenylation treatment temperature is 250-300 DEG C, holding time is 30-40min, then obtaining the CIS thin film which is accord with stoichiometry, compacting the CIS thin film, one of the compacting is under room temperature, and pressure intensity is 150-200MPa, the other compacting is that compacting after heating moulds and samples to 40-60DEG C, and pressure intensity is 300-600MPa, carrying out the heat treatment to the compacted CIS thin film, treatment temperature is 400-500 DEG C, holding time is 30-60min, and finally obtaining the compact CIS thin filmwhose surface is smooth.</description><subject>APPARATUS THEREFOR</subject><subject>CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS ANDNON-FERROUS ALLOYS</subject><subject>CHEMISTRY</subject><subject>ELECTROFORMING</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>FERROUS OR NON-FERROUS ALLOYS</subject><subject>METALLURGY</subject><subject>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><subject>TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjL0KwjAURrM4iPoOF3ehsYh7i-JiJ_eSpl80kD9uEvDxreADOJ0zHM5aDHeUV5zJRKbESIpteJKOPildSNfE1ZMNs12Q4RC-YqzzFAMZh7edHCjXKRdWBVuxMspl7H7ciP318uhvB6Q4Ii9TBJSxH2Qjj6fm3Mqua_-KPrVeN20</recordid><startdate>20100728</startdate><enddate>20100728</enddate><creator>NIE HONGBO</creator><creator>YANG XIA</creator><creator>GUO SHIJU</creator><creator>WANG YANLAI</creator><creator>WANG YIMIN</creator><scope>EVB</scope></search><sort><creationdate>20100728</creationdate><title>Method for preparing compact cuprum indium selenium film on flexible substrate</title><author>NIE HONGBO ; YANG XIA ; GUO SHIJU ; WANG YANLAI ; WANG YIMIN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN101250731BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2010</creationdate><topic>APPARATUS THEREFOR</topic><topic>CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS ANDNON-FERROUS ALLOYS</topic><topic>CHEMISTRY</topic><topic>ELECTROFORMING</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>FERROUS OR NON-FERROUS ALLOYS</topic><topic>METALLURGY</topic><topic>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</topic><topic>TREATMENT OF ALLOYS OR NON-FERROUS METALS</topic><toplevel>online_resources</toplevel><creatorcontrib>NIE HONGBO</creatorcontrib><creatorcontrib>YANG XIA</creatorcontrib><creatorcontrib>GUO SHIJU</creatorcontrib><creatorcontrib>WANG YANLAI</creatorcontrib><creatorcontrib>WANG YIMIN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NIE HONGBO</au><au>YANG XIA</au><au>GUO SHIJU</au><au>WANG YANLAI</au><au>WANG YIMIN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for preparing compact cuprum indium selenium film on flexible substrate</title><date>2010-07-28</date><risdate>2010</risdate><abstract>A method for preparing compact CuInSe2 thin film on flexible substrates belongs to the photovoltaic cell technical field, which is characterized in that the method comprises the following steps: preparing Cu-In alloy prefabricated film on a metallic titanium flake or on a stainless steel flake by adopting the constant-current co-electrode position method, seleniding the Cu-In alloy prefabricated film in selenium steam, wherein selenylation treatment temperature is 250-300 DEG C, holding time is 30-40min, then obtaining the CIS thin film which is accord with stoichiometry, compacting the CIS thin film, one of the compacting is under room temperature, and pressure intensity is 150-200MPa, the other compacting is that compacting after heating moulds and samples to 40-60DEG C, and pressure intensity is 300-600MPa, carrying out the heat treatment to the compacted CIS thin film, treatment temperature is 400-500 DEG C, holding time is 30-60min, and finally obtaining the compact CIS thin filmwhose surface is smooth.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | APPARATUS THEREFOR CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS ANDNON-FERROUS ALLOYS CHEMISTRY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FERROUS OR NON-FERROUS ALLOYS METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS TREATMENT OF ALLOYS OR NON-FERROUS METALS |
title | Method for preparing compact cuprum indium selenium film on flexible substrate |
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