Combined different valence ions doped crystal of lead tungstate with high light yield, and prepartion method

This invention relates to a method for preparing heterovalent ions-doped high-luminescence-yield lead tungstate crystal and its preparation method. The high-luminescence-yield lead tungstate crystal is doped with F- 100-8000 ppm, Sb3+ 100-5000 ppm, and Mo6+, V5+, Nb5+, Zr4+, and Ti4+ 0-10000 ppm, an...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	XIE JIANJUN, XIONG WEI, LIAO JINGYING, SHAO PEIFA, YE CHONGZHI, YUAN HUI, TONG NAIZHU, WU HONGSHU, ZHAN ZONGGUI, SHEN BINGFU, YAN DONGSHENG, CHEN LIANG, LI PEIJUN, ZHU XIANGYU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!