Method for producing metal-oxide-semiconductor transistor
The invention discloses a method of making metal oxide semiconductor (MOS) transistor, comprising: providing a substrate and forming a gate structure on the substrate, and forming a skewed gap wall around the gate structure and forming a sacrifice gap wall around the skewed gap wall; forming plural...
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creator | CAI CHENGZONG CAI ZHENHUA LAN BANGQIANG LIN YUXIN CAI ZONGLONG |
description | The invention discloses a method of making metal oxide semiconductor (MOS) transistor, comprising: providing a substrate and forming a gate structure on the substrate, and forming a skewed gap wall around the gate structure and forming a sacrifice gap wall around the skewed gap wall; forming plural extension layers on two sides of the gate structure, where the extension layers are outside the sacrifice gap wall and then removing the sacrifice gap wall and forming plural drain/source extension regions in the substrate outside the skewed gap wall and the extension layers. Thus, the high temperature of selective extension process can not destroy the source/drain extension regions. |
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Thus, the high temperature of selective extension process can not destroy the source/drain extension regions.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20071205&DB=EPODOC&CC=CN&NR=101083211A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20071205&DB=EPODOC&CC=CN&NR=101083211A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CAI CHENGZONG</creatorcontrib><creatorcontrib>CAI ZHENHUA</creatorcontrib><creatorcontrib>LAN BANGQIANG</creatorcontrib><creatorcontrib>LIN YUXIN</creatorcontrib><creatorcontrib>CAI ZONGLONG</creatorcontrib><title>Method for producing metal-oxide-semiconductor transistor</title><description>The invention discloses a method of making metal oxide semiconductor (MOS) transistor, comprising: providing a substrate and forming a gate structure on the substrate, and forming a skewed gap wall around the gate structure and forming a sacrifice gap wall around the skewed gap wall; forming plural extension layers on two sides of the gate structure, where the extension layers are outside the sacrifice gap wall and then removing the sacrifice gap wall and forming plural drain/source extension regions in the substrate outside the skewed gap wall and the extension layers. 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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Method for producing metal-oxide-semiconductor transistor |
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