Resistive memory element, operating method thereof, and data processing system using the memory element
A multi-bit memory cell stores information corresponding to a high resistive state and multiple other resistive states lower than the high resistive state. A resistance of a memory element within the multi-bit memory cell switches from the high resistive state to one of the other multiple resistive...
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| creator | BAEK IN-GYU,KIM DONGUL,LEE JANG-EUN,LEE MYOUNG-JAE,SEO SUN-AE,KIM HYUNG-JUN,AHN SEUNG-EON,YIM EUN-KYUNG |
| description | A multi-bit memory cell stores information corresponding to a high resistive state and multiple other resistive states lower than the high resistive state. A resistance of a memory element within the multi-bit memory cell switches from the high resistive state to one of the other multiple resistive states by applying a corresponding current to the memory element. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES |
| title | Resistive memory element, operating method thereof, and data processing system using the memory element |
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