Nonvolatile memory device and nonvolatile memory array including the same

A nonvolatile memory device having self-presence diode characteristics, and/or a nonvolatile memory array including the nonvolatile memory device may be provided. The nonvolatile memory device may include a lower electrode, a first semiconductor oxide layer on the lower electrode, a second semicondu...

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Bibliographische Detailangaben
1. Verfasser: LEE MYOUNG-JAE,YOO IN-KYEONG,LEE EUN-HONG,KIM JONG-WAN,KIM DONGUL,AHN SEUNG-EON
Format: Patent
Sprache:eng
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Zusammenfassung:A nonvolatile memory device having self-presence diode characteristics, and/or a nonvolatile memory array including the nonvolatile memory device may be provided. The nonvolatile memory device may include a lower electrode, a first semiconductor oxide layer on the lower electrode, a second semiconductor oxide layer on the first semiconductor oxide layer, and/or an upper electrode on the second semiconductor oxide layer.