A CMOS imager photodiode with enhanced capacitance and method for manufacturing same

A pixel sensor cell having a semiconductor substrate having a surface; a photosensitive element formed in a substrate having a non-laterally disposed charge collection region entirely isolated from a physical boundary including the substrate surface. The photosensitive element comprises a trench hav...

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Bibliographische Detailangaben

1. Verfasser:	ADKISSON JAMES W.,ELLIS-MONAGHAN JOHN J.,JAFFE MARK D.,PEARSON DALE J.,ROGERS DENNIS L
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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