Anisotropic wet etch device and its production method

A method of fabrication and a field effect device structure are presented that reduce source/drain capacitance and allow for device body contact. A Si based material pedestal is produced, the top surface and the sidewalls of which are oriented in a way to be substantially parallel with selected crys...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	LI YUJUN,SETTLEMYER KENNETH T. JR.,BEINTNER JOCHEN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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