Method for making strain silicon channel metal semiconductor transistor

Method for making strain silicon channel metal semiconductor transistor

The invention provides a method for manufacturing transistor elements of a strained silicon positive channel metal oxide semiconductor, which comprises the following steps: a supporting base is provided; at least a gate structure is formed on the supporting base; a mask layer is formed on the gate s...

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1. Verfasser: XIE CHAOJING
Format: Patent
Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description The invention provides a method for manufacturing transistor elements of a strained silicon positive channel metal oxide semiconductor, which comprises the following steps: a supporting base is provided; at least a gate structure is formed on the supporting base; a mask layer is formed on the gate structure; an etching process is adopted to form two grooves in the supporting base on two opposite sides of the gate structure; a selective epitaxy growth process is used for forming epitaxial layers in the grooves, respectively.
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at least a gate structure is formed on the supporting base; a mask layer is formed on the gate structure; an etching process is adopted to form two grooves in the supporting base on two opposite sides of the gate structure; a selective epitaxy growth process is used for forming epitaxial layers in the grooves, respectively.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20100127&amp;DB=EPODOC&amp;CC=CN&amp;NR=100585816C$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76302</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20100127&amp;DB=EPODOC&amp;CC=CN&amp;NR=100585816C$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>XIE CHAOJING</creatorcontrib><title>Method for making strain silicon channel metal semiconductor transistor</title><description>The invention provides a method for manufacturing transistor elements of a strained silicon positive channel metal oxide semiconductor, which comprises the following steps: a supporting base is provided; 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eng</language><creationdate>2010</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>XIE CHAOJING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>XIE CHAOJING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for making strain silicon channel metal semiconductor transistor</title><date>2010-01-27</date><risdate>2010</risdate><abstract>The invention provides a method for manufacturing transistor elements of a strained silicon positive channel metal oxide semiconductor, which comprises the following steps: a supporting base is provided; at least a gate structure is formed on the supporting base; a mask layer is formed on the gate structure; an etching process is adopted to form two grooves in the supporting base on two opposite sides of the gate structure; 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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for making strain silicon channel metal semiconductor transistor
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