Memory construction and preparation method thereof

Memory construction and preparation method thereof

The invention discloses a memorizer, which is characterized in that both a floating grid and a control grid thereof are arranged inside a groove of a semiconductor. A preparation method thereof comprises the steps of: providing a substrate, forming a first groove in the substrate and forming a first...

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Hauptverfasser: XIAO QINGNAN, HUANG ZHONGLIN, WU ZHIXIANG, ZHANG MINGCHENG, LI PEIYING, ZHANG XIHUA
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator XIAO QINGNAN
HUANG ZHONGLIN
WU ZHIXIANG
ZHANG MINGCHENG
LI PEIYING
ZHANG XIHUA
description The invention discloses a memorizer, which is characterized in that both a floating grid and a control grid thereof are arranged inside a groove of a semiconductor. A preparation method thereof comprises the steps of: providing a substrate, forming a first groove in the substrate and forming a first grid dielectric layer on the surface of the first groove, and then coating a first conducting layer on the first grid dielectric layer; etching the first conducting layer, forming a side wall element on the side wall of the first groove to be used as the floating grid, and continuing etching the bottom of the first groove to form a second groove; forming grid dielectric layers on the surface of the side wall element, and the side wall and the bottom surface of the second groove; and forming a second conducting layer, and filling-up the first groove and the second groove to be used as the control grid.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Memory construction and preparation method thereof
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