Solid imaging device and image forming equipment
PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus and camera in which the sensitivity reduction can be suppressed to a terminal pixel on a light receiving plane by preventing a light irradiation area from being spread to a removal area of an anti-reflection film up to a terminal area...
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creator | YAHAZU KOJI TADANI KEIJI WATANABE SHINYA ISOO YOSUKE SUZUKI TADASHI KITANO YOSHIAKI |
description | PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus and camera in which the sensitivity reduction can be suppressed to a terminal pixel on a light receiving plane by preventing a light irradiation area from being spread to a removal area of an anti-reflection film up to a terminal area of the light receiving plane. SOLUTION: A plurality of pixels is integrated on a light receiving plane RLR, a photodiode is formed separately for each pixel on a semiconductor substrate that becomes the light receiving plane RLRand further, a signal reading portion for reading a signal charge generated and accumulated in the photo diode or a voltage corresponding to the signal charge is formed. In such a case, an anti-reflection film is formed while covering a region RPDof the photodiode, and in each photodiode region RPD, the anti-reflection film is removed by providing a removal area 19a. The arrangement of such a removal area 19a within the photodiode region RPDis made different for each pixel. COPYRIGHT: (C)200 |
format | Patent |
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SOLUTION: A plurality of pixels is integrated on a light receiving plane RLR, a photodiode is formed separately for each pixel on a semiconductor substrate that becomes the light receiving plane RLRand further, a signal reading portion for reading a signal charge generated and accumulated in the photo diode or a voltage corresponding to the signal charge is formed. In such a case, an anti-reflection film is formed while covering a region RPDof the photodiode, and in each photodiode region RPD, the anti-reflection film is removed by providing a removal area 19a. The arrangement of such a removal area 19a within the photodiode region RPDis made different for each pixel. 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SOLUTION: A plurality of pixels is integrated on a light receiving plane RLR, a photodiode is formed separately for each pixel on a semiconductor substrate that becomes the light receiving plane RLRand further, a signal reading portion for reading a signal charge generated and accumulated in the photo diode or a voltage corresponding to the signal charge is formed. In such a case, an anti-reflection film is formed while covering a region RPDof the photodiode, and in each photodiode region RPD, the anti-reflection film is removed by providing a removal area 19a. The arrangement of such a removal area 19a within the photodiode region RPDis made different for each pixel. COPYRIGHT: (C)200</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES |
title | Solid imaging device and image forming equipment |
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