Einrichtung zum kontinuierlichen Züchten von Einkristallen
Metal oxide whiskers are produced by vaporization and deposition in the apparatus shown. The source material 25 to be grown into whiskers is melted in heated crucible 26 and carried as a film by cylinder 27 into heated zone 20 where it is vaporized. The whiskers are grown on cylinders 31 and 32 and...
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creator | GATTI,ARNO |
description | Metal oxide whiskers are produced by vaporization and deposition in the apparatus shown. The source material 25 to be grown into whiskers is melted in heated crucible 26 and carried as a film by cylinder 27 into heated zone 20 where it is vaporized. The whiskers are grown on cylinders 31 and 32 and are removed by scrapers 40. The whole is enclosed in a container 10 through which a gas is flowing. The production of aluminium oxide is exemplified when material 25 is molten aluminium, zone 20 is maintained at 1300 DEG to 1600 DEG C. and the gas is moist hydrogen containing sufficient water to oxidize the aluminium to alumina. Alumina whiskers are removed from vessels 45. |
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The source material 25 to be grown into whiskers is melted in heated crucible 26 and carried as a film by cylinder 27 into heated zone 20 where it is vaporized. The whiskers are grown on cylinders 31 and 32 and are removed by scrapers 40. The whole is enclosed in a container 10 through which a gas is flowing. The production of aluminium oxide is exemplified when material 25 is molten aluminium, zone 20 is maintained at 1300 DEG to 1600 DEG C. and the gas is moist hydrogen containing sufficient water to oxidize the aluminium to alumina. Alumina whiskers are removed from vessels 45.</description><edition>1</edition><language>ger</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1965</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19651215&DB=EPODOC&CC=CH&NR=403717A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19651215&DB=EPODOC&CC=CH&NR=403717A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GATTI,ARNO</creatorcontrib><title>Einrichtung zum kontinuierlichen Züchten von Einkristallen</title><description><PICT:0970635/C1/1> Metal oxide whiskers are produced by vaporization and deposition in the apparatus shown. The source material 25 to be grown into whiskers is melted in heated crucible 26 and carried as a film by cylinder 27 into heated zone 20 where it is vaporized. The whiskers are grown on cylinders 31 and 32 and are removed by scrapers 40. The whole is enclosed in a container 10 through which a gas is flowing. The production of aluminium oxide is exemplified when material 25 is molten aluminium, zone 20 is maintained at 1300 DEG to 1600 DEG C. and the gas is moist hydrogen containing sufficient water to oxidize the aluminium to alumina. Alumina whiskers are removed from vessels 45.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1965</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLB2zcwrykzOKCnNS1eoKs1VyM7PK8nMK81MLcoBCqfmKUQd3gOUBjLK8vMUgKqzizKLSxJzclLzeBhY0xJzilN5oTQ3g5yba4izh25qQX58anFBYnJqXmpJvLOHiYGxuaG5ozFBBQBEFS-m</recordid><startdate>19651215</startdate><enddate>19651215</enddate><creator>GATTI,ARNO</creator><scope>EVB</scope></search><sort><creationdate>19651215</creationdate><title>Einrichtung zum kontinuierlichen Züchten von Einkristallen</title><author>GATTI,ARNO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CH403717A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>ger</language><creationdate>1965</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>GATTI,ARNO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GATTI,ARNO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Einrichtung zum kontinuierlichen Züchten von Einkristallen</title><date>1965-12-15</date><risdate>1965</risdate><abstract><PICT:0970635/C1/1> Metal oxide whiskers are produced by vaporization and deposition in the apparatus shown. The source material 25 to be grown into whiskers is melted in heated crucible 26 and carried as a film by cylinder 27 into heated zone 20 where it is vaporized. The whiskers are grown on cylinders 31 and 32 and are removed by scrapers 40. The whole is enclosed in a container 10 through which a gas is flowing. The production of aluminium oxide is exemplified when material 25 is molten aluminium, zone 20 is maintained at 1300 DEG to 1600 DEG C. and the gas is moist hydrogen containing sufficient water to oxidize the aluminium to alumina. Alumina whiskers are removed from vessels 45.</abstract><edition>1</edition><oa>free_for_read</oa></addata></record> |
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subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
title | Einrichtung zum kontinuierlichen Züchten von Einkristallen |
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