Halbleitervorrichtung, insbesondere photoempfindliche Vorrichtung, und Verfahren zu deren Herstellung
966,768. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES Ltd. May 10, 1961 [May 13, 1960], No. 17029/61. Heading H1K. A semi-conductor device comprising a body of an N-type chalcogenide of a bivalent metal is provided with an ohmic contact through an electrode consisting of gold and/or silver...
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| creator | MARIA BAKKER,MARTINUS ANTONIUS VULPEN,AALBERT VAN |
| description | 966,768. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES Ltd. May 10, 1961 [May 13, 1960], No. 17029/61. Heading H1K. A semi-conductor device comprising a body of an N-type chalcogenide of a bivalent metal is provided with an ohmic contact through an electrode consisting of gold and/or silver activated with one or more of the elements In, Ga and A1. A photoelectric cell comprises a high - resistance N - type CdS body 5 provided with electrodes 6 of vacuumdeposited gold - indium alloy containing 9 atom % indium, bonded by silver paste layers 9 to holder 8. The electrodes may alternatively be inhomogeneous, consisting of indium adjacent body 5 and of gold on the side remote from the body, the indium layer being thin and merging into the gold. Such an electrode may be formed by vacuum deposition from a wire consisting of a gold core having electro-deposited thereon a thin indium layer. A plurality of devices may be made by forming electrodes on one face of a strip of CdS and cutting it into smaller units. Electrodes may also be formed by electrolytic deposition or cathode atomization. |
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PHILIPS ELECTRICAL INDUSTRIES Ltd. May 10, 1961 [May 13, 1960], No. 17029/61. Heading H1K. A semi-conductor device comprising a body of an N-type chalcogenide of a bivalent metal is provided with an ohmic contact through an electrode consisting of gold and/or silver activated with one or more of the elements In, Ga and A1. A photoelectric cell comprises a high - resistance N - type CdS body 5 provided with electrodes 6 of vacuumdeposited gold - indium alloy containing 9 atom % indium, bonded by silver paste layers 9 to holder 8. The electrodes may alternatively be inhomogeneous, consisting of indium adjacent body 5 and of gold on the side remote from the body, the indium layer being thin and merging into the gold. Such an electrode may be formed by vacuum deposition from a wire consisting of a gold core having electro-deposited thereon a thin indium layer. A plurality of devices may be made by forming electrodes on one face of a strip of CdS and cutting it into smaller units. 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Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES Ltd. May 10, 1961 [May 13, 1960], No. 17029/61. Heading H1K. A semi-conductor device comprising a body of an N-type chalcogenide of a bivalent metal is provided with an ohmic contact through an electrode consisting of gold and/or silver activated with one or more of the elements In, Ga and A1. A photoelectric cell comprises a high - resistance N - type CdS body 5 provided with electrodes 6 of vacuumdeposited gold - indium alloy containing 9 atom % indium, bonded by silver paste layers 9 to holder 8. The electrodes may alternatively be inhomogeneous, consisting of indium adjacent body 5 and of gold on the side remote from the body, the indium layer being thin and merging into the gold. Such an electrode may be formed by vacuum deposition from a wire consisting of a gold core having electro-deposited thereon a thin indium layer. 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Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES Ltd. May 10, 1961 [May 13, 1960], No. 17029/61. Heading H1K. A semi-conductor device comprising a body of an N-type chalcogenide of a bivalent metal is provided with an ohmic contact through an electrode consisting of gold and/or silver activated with one or more of the elements In, Ga and A1. A photoelectric cell comprises a high - resistance N - type CdS body 5 provided with electrodes 6 of vacuumdeposited gold - indium alloy containing 9 atom % indium, bonded by silver paste layers 9 to holder 8. The electrodes may alternatively be inhomogeneous, consisting of indium adjacent body 5 and of gold on the side remote from the body, the indium layer being thin and merging into the gold. Such an electrode may be formed by vacuum deposition from a wire consisting of a gold core having electro-deposited thereon a thin indium layer. A plurality of devices may be made by forming electrodes on one face of a strip of CdS and cutting it into smaller units. Electrodes may also be formed by electrolytic deposition or cathode atomization.</abstract><edition>1</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Halbleitervorrichtung, insbesondere photoempfindliche Vorrichtung, und Verfahren zu deren Herstellung |
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