DIFFUSED JUNCTION GAP ELECTROLUMINESCENT DEVICES

p-n junctions for electroluminescent devices are produced in GaP and related semiconductors by diffusing zinc into an n-type wafer. The diffusion takes place in a sealed capsule with ZnP2 as the zinc source. The ZnP2 is included in the capsule in an amount which entirely evaporates during diffusion....

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LUTHER, LARS C, CASEY, HORACE C. (JR)
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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