SILICON GATE FET-NIOBIUM OXIDE DIODE-MEMORY CELL

1340830 Semi-conductor memory devices INTERNATIONAL BUSINESS MACHINES CORP 1 Dec 1972 [20 Dec 1971] 55489/72 Heading H1K A memory device consists of a silicon gated N-channel enhancement mode IGFET with a bi-stable switching diode consisting of a layer of niobium oxide sandwiched between layers of n...

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Bibliographische Detailangaben

Hauptverfasser:	CHANG, CHI S, BLEHER, JOHANNES H, DOCKERTY, ROBERT C
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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