METHOD OF GROWING SINGLE CRYSTAL DIAMOND ASSISTED BY POLYCRYSTALLINE DIAMOND GROWTH
A method of growing single crystal diamond assisted by polycrystalline diamond growth to enhance dimensions and quality of the single crystal diamond includes thermally mating a diamond seed on a top surface of a substrate holder providing a growth surface for a combination of single crystal diamond...
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| creator | HOLBER, WILLIAM BASNETT, ANDREW FRANCIS BROWN, ADAM JAMES BASNETT, ROBERT J CHARRIS-HERNANDEZ, AMANDA WADE, TRAVIS CHARLES |
| description | A method of growing single crystal diamond assisted by polycrystalline diamond growth to enhance dimensions and quality of the single crystal diamond includes thermally mating a diamond seed on a top surface of a substrate holder providing a growth surface for a combination of single crystal diamond and polycrystalline diamond. A predetermined temperature difference between the diamond seed and the substrate holder during processing along with the plasma process conditions causes a single crystal diamond growth rate to be different from a polycrystalline growth rate by a predetermined amount. Process gasses are introduced, and a plasma is formed to grow both single crystal diamond and polycrystalline diamond on the growth surface so that the polycrystalline diamond grown adjacent to the single crystal diamond shields side surfaces of the growing single crystal diamond, thereby improving growth quality across the growing single crystal diamond.
L'invention concerne un procédé de croissance de diamant monocristallin assisté par croissance de diamant polycristallin pour améliorer les dimensions et la qualité du diamant monocristallin comprenant l'accouplement thermique d'une graine de diamant sur une surface supérieure d'un support de substrat fournissant une surface de croissance pour une combinaison de diamant monocristallin et de diamant polycristallin. Une différence de température prédéterminée entre le germe de diamant et le support de substrat pendant le traitement conjointement avec les conditions de traitement au plasma provoque un taux de croissance de diamant monocristallin différent d'un taux de croissance polycristallin d'une quantité prédéterminée. Des gaz de traitement sont introduits, et un plasma est formé pour faire croître à la fois un diamant monocristallin et un diamant polycristallin sur la surface de croissance de telle sorte que le diamant polycristallin développé adjacent au diamant monocristallin protège des surfaces latérales du diamant monocristallin en train de croître, ce qui permet d'améliorer la qualité de croissance du diamant monocristallin en train de croître. |
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L'invention concerne un procédé de croissance de diamant monocristallin assisté par croissance de diamant polycristallin pour améliorer les dimensions et la qualité du diamant monocristallin comprenant l'accouplement thermique d'une graine de diamant sur une surface supérieure d'un support de substrat fournissant une surface de croissance pour une combinaison de diamant monocristallin et de diamant polycristallin. Une différence de température prédéterminée entre le germe de diamant et le support de substrat pendant le traitement conjointement avec les conditions de traitement au plasma provoque un taux de croissance de diamant monocristallin différent d'un taux de croissance polycristallin d'une quantité prédéterminée. Des gaz de traitement sont introduits, et un plasma est formé pour faire croître à la fois un diamant monocristallin et un diamant polycristallin sur la surface de croissance de telle sorte que le diamant polycristallin développé adjacent au diamant monocristallin protège des surfaces latérales du diamant monocristallin en train de croître, ce qui permet d'améliorer la qualité de croissance du diamant monocristallin en train de croître.</description><language>eng ; fre</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240102&DB=EPODOC&CC=CA&NR=3163682C$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240102&DB=EPODOC&CC=CA&NR=3163682C$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HOLBER, WILLIAM</creatorcontrib><creatorcontrib>BASNETT, ANDREW FRANCIS</creatorcontrib><creatorcontrib>BROWN, ADAM JAMES</creatorcontrib><creatorcontrib>BASNETT, ROBERT J</creatorcontrib><creatorcontrib>CHARRIS-HERNANDEZ, AMANDA</creatorcontrib><creatorcontrib>WADE, TRAVIS CHARLES</creatorcontrib><title>METHOD OF GROWING SINGLE CRYSTAL DIAMOND ASSISTED BY POLYCRYSTALLINE DIAMOND GROWTH</title><description>A method of growing single crystal diamond assisted by polycrystalline diamond growth to enhance dimensions and quality of the single crystal diamond includes thermally mating a diamond seed on a top surface of a substrate holder providing a growth surface for a combination of single crystal diamond and polycrystalline diamond. A predetermined temperature difference between the diamond seed and the substrate holder during processing along with the plasma process conditions causes a single crystal diamond growth rate to be different from a polycrystalline growth rate by a predetermined amount. Process gasses are introduced, and a plasma is formed to grow both single crystal diamond and polycrystalline diamond on the growth surface so that the polycrystalline diamond grown adjacent to the single crystal diamond shields side surfaces of the growing single crystal diamond, thereby improving growth quality across the growing single crystal diamond.
L'invention concerne un procédé de croissance de diamant monocristallin assisté par croissance de diamant polycristallin pour améliorer les dimensions et la qualité du diamant monocristallin comprenant l'accouplement thermique d'une graine de diamant sur une surface supérieure d'un support de substrat fournissant une surface de croissance pour une combinaison de diamant monocristallin et de diamant polycristallin. Une différence de température prédéterminée entre le germe de diamant et le support de substrat pendant le traitement conjointement avec les conditions de traitement au plasma provoque un taux de croissance de diamant monocristallin différent d'un taux de croissance polycristallin d'une quantité prédéterminée. Des gaz de traitement sont introduits, et un plasma est formé pour faire croître à la fois un diamant monocristallin et un diamant polycristallin sur la surface de croissance de telle sorte que le diamant polycristallin développé adjacent au diamant monocristallin protège des surfaces latérales du diamant monocristallin en train de croître, ce qui permet d'améliorer la qualité de croissance du diamant monocristallin en train de croître.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAj2dQ3x8HdR8HdTcA_yD_f0c1cIBhI-rgrOQZHBIY4-Ci6ejr7-fi4KjsHBnsEhri4KTpEKAf4-kVB5H08_V7gakBEhHjwMrGmJOcWpvFCam0HezTXE2UM3tSA_PrW4IDE5NS-1JN7Z0djQzNjMwsjZmLAKAGXHL00</recordid><startdate>20240102</startdate><enddate>20240102</enddate><creator>HOLBER, WILLIAM</creator><creator>BASNETT, ANDREW FRANCIS</creator><creator>BROWN, ADAM JAMES</creator><creator>BASNETT, ROBERT J</creator><creator>CHARRIS-HERNANDEZ, AMANDA</creator><creator>WADE, TRAVIS CHARLES</creator><scope>EVB</scope></search><sort><creationdate>20240102</creationdate><title>METHOD OF GROWING SINGLE CRYSTAL DIAMOND ASSISTED BY POLYCRYSTALLINE DIAMOND GROWTH</title><author>HOLBER, WILLIAM ; BASNETT, ANDREW FRANCIS ; BROWN, ADAM JAMES ; BASNETT, ROBERT J ; CHARRIS-HERNANDEZ, AMANDA ; WADE, TRAVIS CHARLES</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CA3163682C3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2024</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>HOLBER, WILLIAM</creatorcontrib><creatorcontrib>BASNETT, ANDREW FRANCIS</creatorcontrib><creatorcontrib>BROWN, ADAM JAMES</creatorcontrib><creatorcontrib>BASNETT, ROBERT J</creatorcontrib><creatorcontrib>CHARRIS-HERNANDEZ, AMANDA</creatorcontrib><creatorcontrib>WADE, TRAVIS CHARLES</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HOLBER, WILLIAM</au><au>BASNETT, ANDREW FRANCIS</au><au>BROWN, ADAM JAMES</au><au>BASNETT, ROBERT J</au><au>CHARRIS-HERNANDEZ, AMANDA</au><au>WADE, TRAVIS CHARLES</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF GROWING SINGLE CRYSTAL DIAMOND ASSISTED BY POLYCRYSTALLINE DIAMOND GROWTH</title><date>2024-01-02</date><risdate>2024</risdate><abstract>A method of growing single crystal diamond assisted by polycrystalline diamond growth to enhance dimensions and quality of the single crystal diamond includes thermally mating a diamond seed on a top surface of a substrate holder providing a growth surface for a combination of single crystal diamond and polycrystalline diamond. A predetermined temperature difference between the diamond seed and the substrate holder during processing along with the plasma process conditions causes a single crystal diamond growth rate to be different from a polycrystalline growth rate by a predetermined amount. Process gasses are introduced, and a plasma is formed to grow both single crystal diamond and polycrystalline diamond on the growth surface so that the polycrystalline diamond grown adjacent to the single crystal diamond shields side surfaces of the growing single crystal diamond, thereby improving growth quality across the growing single crystal diamond.
L'invention concerne un procédé de croissance de diamant monocristallin assisté par croissance de diamant polycristallin pour améliorer les dimensions et la qualité du diamant monocristallin comprenant l'accouplement thermique d'une graine de diamant sur une surface supérieure d'un support de substrat fournissant une surface de croissance pour une combinaison de diamant monocristallin et de diamant polycristallin. Une différence de température prédéterminée entre le germe de diamant et le support de substrat pendant le traitement conjointement avec les conditions de traitement au plasma provoque un taux de croissance de diamant monocristallin différent d'un taux de croissance polycristallin d'une quantité prédéterminée. Des gaz de traitement sont introduits, et un plasma est formé pour faire croître à la fois un diamant monocristallin et un diamant polycristallin sur la surface de croissance de telle sorte que le diamant polycristallin développé adjacent au diamant monocristallin protège des surfaces latérales du diamant monocristallin en train de croître, ce qui permet d'améliorer la qualité de croissance du diamant monocristallin en train de croître.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | METHOD OF GROWING SINGLE CRYSTAL DIAMOND ASSISTED BY POLYCRYSTALLINE DIAMOND GROWTH |
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