CRUCIBLE FOR THE CRYSTALLIZATION OF SILICON AND PROCESS FOR MAKING THE SAME
The invention relates to a crucible for the crystallization of silicon and to the preparation and application of release coatings for crucibles used in the handling of molten materials that are solidified in the crucible and then removed as ingots, and more particularly to release coatings for cruci...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng ; fre |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The invention relates to a crucible for the crystallization of silicon and to the preparation and application of release coatings for crucibles used in the handling of molten materials that are solidified in the crucible and then removed as ingots, and more particularly to release coatings for crucibles used in the solidification of polycrystalline silicon. The objective of the inventor was to provide a crucible comprising a silicon nitride coating which is faster and cheaper to produce and which is stronger with an improved adherence to the walls. It has now been found that these problems can be solved with a crucible for the crystallization of silicon comprising a) a base body comprising a bottom surface and side walls defining an inner volume; b) a protective coating comprises 80 to 95 wt. % of silicon nitride and 5 to 20 wt. of a low temperature mineral binder, the total oxygen content ranging from 5 to 15 % by weight. |
---|