METHOD FOR PRODUCING HIGHLY TEXTURED, STRIP-SHAPED HIGH-TEMPERATURE SUPERCONDUCTORS
Band-shaped HTSL with a metal substrate, at least one buffer layer that consists of zirconates, preferably La2Zr2O7, and/or rare-earth oxides, preferably CeO2/Gd2O3 and/or Y2O3, and with an HTSL layer that is found on the buffer layer, wherein the buffer layer has a texturing that results in discret...
Gespeichert in:
Hauptverfasser: | , , , , , |
---|---|
Format: | Patent |
Sprache: | eng ; fre |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | KNOTH, KERSTIN SCHLOBACH, BRIGITTE HUEHNE, RUBEN BAECKER, MICHAEL FALTER, MARTINA SCHUEPP-NIEWA, BARBARA |
description | Band-shaped HTSL with a metal substrate, at least one buffer layer that consists of zirconates, preferably La2Zr2O7, and/or rare-earth oxides, preferably CeO2/Gd2O3 and/or Y2O3, and with an HTSL layer that is found on the buffer layer, wherein the buffer layer has a texturing that results in discrete reflexes and not only with regard to diffraction rings in a RHEED measurement before application of an HTSL layer. Intermediate product for the production of band-shaped HTSL, with a metal substrate and at least one buffer layer that consists of La2Zr2O7, nickel oxide, cerium oxide, gadolinium-doped cerium oxide, magnesium oxide or yttrium oxide, wherein the buffer layer has a texturing that in the case of a RHEED measurement results in discrete reflexes and not only in diffraction rings. Band-shaped HTSL with a metal substrate, at least one buffer layer and one HTSL layer, wherein the buffer layer - the last buffer layer in the case of more than one buffer layer -- is textured to a great extent at least on its interface in the HTSL layer.
Procédé chimique humide de fabrication de supraconducteurs à haute température critique en forme de bandes comportant un substrat métallique, au moins une couche tampon et une couche de supraconducteur à haute température critique. L'objet de la présente invention est d'améliorer la capacité de transfert de texture de la couche tampon. A cet effet, on utilise un solvant polaire possédant au moins un groupe hydroxyle libre lors de la préparation d'une solution de revêtement qui est appliquée sur le substrat métallique et qui forme la couche tampon après séchage et recuisson. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CA2575312C</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CA2575312C</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CA2575312C3</originalsourceid><addsrcrecordid>eNrjZAj2dQ3x8HdRcPMPUggI8ncJdfb0c1fw8HT38IlUCHGNCAkNcnXRUQgOCfIM0A32cAxwdQHL6oa4-ga4BjmC5BWCQ4FMZ38_oO4Q_6BgHgbWtMSc4lReKM3NIO_mGuLsoZtakB-fWlyQmJyal1oS7-xoZGpuamxo5GxMWAUAgtIvjQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR PRODUCING HIGHLY TEXTURED, STRIP-SHAPED HIGH-TEMPERATURE SUPERCONDUCTORS</title><source>esp@cenet</source><creator>KNOTH, KERSTIN ; SCHLOBACH, BRIGITTE ; HUEHNE, RUBEN ; BAECKER, MICHAEL ; FALTER, MARTINA ; SCHUEPP-NIEWA, BARBARA</creator><creatorcontrib>KNOTH, KERSTIN ; SCHLOBACH, BRIGITTE ; HUEHNE, RUBEN ; BAECKER, MICHAEL ; FALTER, MARTINA ; SCHUEPP-NIEWA, BARBARA</creatorcontrib><description>Band-shaped HTSL with a metal substrate, at least one buffer layer that consists of zirconates, preferably La2Zr2O7, and/or rare-earth oxides, preferably CeO2/Gd2O3 and/or Y2O3, and with an HTSL layer that is found on the buffer layer, wherein the buffer layer has a texturing that results in discrete reflexes and not only with regard to diffraction rings in a RHEED measurement before application of an HTSL layer. Intermediate product for the production of band-shaped HTSL, with a metal substrate and at least one buffer layer that consists of La2Zr2O7, nickel oxide, cerium oxide, gadolinium-doped cerium oxide, magnesium oxide or yttrium oxide, wherein the buffer layer has a texturing that in the case of a RHEED measurement results in discrete reflexes and not only in diffraction rings. Band-shaped HTSL with a metal substrate, at least one buffer layer and one HTSL layer, wherein the buffer layer - the last buffer layer in the case of more than one buffer layer -- is textured to a great extent at least on its interface in the HTSL layer.
Procédé chimique humide de fabrication de supraconducteurs à haute température critique en forme de bandes comportant un substrat métallique, au moins une couche tampon et une couche de supraconducteur à haute température critique. L'objet de la présente invention est d'améliorer la capacité de transfert de texture de la couche tampon. A cet effet, on utilise un solvant polaire possédant au moins un groupe hydroxyle libre lors de la préparation d'une solution de revêtement qui est appliquée sur le substrat métallique et qui forme la couche tampon après séchage et recuisson.</description><language>eng ; fre</language><subject>ARTIFICIAL STONE ; BASIC ELECTRIC ELEMENTS ; CABLES ; CEMENTS ; CERAMICS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; CONDUCTORS ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INSULATORS ; LIME, MAGNESIA ; METALLURGY ; REFRACTORIES ; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES ; SLAG ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TREATMENT OF NATURAL STONE</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110531&DB=EPODOC&CC=CA&NR=2575312C$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110531&DB=EPODOC&CC=CA&NR=2575312C$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KNOTH, KERSTIN</creatorcontrib><creatorcontrib>SCHLOBACH, BRIGITTE</creatorcontrib><creatorcontrib>HUEHNE, RUBEN</creatorcontrib><creatorcontrib>BAECKER, MICHAEL</creatorcontrib><creatorcontrib>FALTER, MARTINA</creatorcontrib><creatorcontrib>SCHUEPP-NIEWA, BARBARA</creatorcontrib><title>METHOD FOR PRODUCING HIGHLY TEXTURED, STRIP-SHAPED HIGH-TEMPERATURE SUPERCONDUCTORS</title><description>Band-shaped HTSL with a metal substrate, at least one buffer layer that consists of zirconates, preferably La2Zr2O7, and/or rare-earth oxides, preferably CeO2/Gd2O3 and/or Y2O3, and with an HTSL layer that is found on the buffer layer, wherein the buffer layer has a texturing that results in discrete reflexes and not only with regard to diffraction rings in a RHEED measurement before application of an HTSL layer. Intermediate product for the production of band-shaped HTSL, with a metal substrate and at least one buffer layer that consists of La2Zr2O7, nickel oxide, cerium oxide, gadolinium-doped cerium oxide, magnesium oxide or yttrium oxide, wherein the buffer layer has a texturing that in the case of a RHEED measurement results in discrete reflexes and not only in diffraction rings. Band-shaped HTSL with a metal substrate, at least one buffer layer and one HTSL layer, wherein the buffer layer - the last buffer layer in the case of more than one buffer layer -- is textured to a great extent at least on its interface in the HTSL layer.
Procédé chimique humide de fabrication de supraconducteurs à haute température critique en forme de bandes comportant un substrat métallique, au moins une couche tampon et une couche de supraconducteur à haute température critique. L'objet de la présente invention est d'améliorer la capacité de transfert de texture de la couche tampon. A cet effet, on utilise un solvant polaire possédant au moins un groupe hydroxyle libre lors de la préparation d'une solution de revêtement qui est appliquée sur le substrat métallique et qui forme la couche tampon après séchage et recuisson.</description><subject>ARTIFICIAL STONE</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CABLES</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>CONCRETE</subject><subject>CONDUCTORS</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>INSULATORS</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>REFRACTORIES</subject><subject>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</subject><subject>SLAG</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAj2dQ3x8HdRcPMPUggI8ncJdfb0c1fw8HT38IlUCHGNCAkNcnXRUQgOCfIM0A32cAxwdQHL6oa4-ga4BjmC5BWCQ4FMZ38_oO4Q_6BgHgbWtMSc4lReKM3NIO_mGuLsoZtakB-fWlyQmJyal1oS7-xoZGpuamxo5GxMWAUAgtIvjQ</recordid><startdate>20110531</startdate><enddate>20110531</enddate><creator>KNOTH, KERSTIN</creator><creator>SCHLOBACH, BRIGITTE</creator><creator>HUEHNE, RUBEN</creator><creator>BAECKER, MICHAEL</creator><creator>FALTER, MARTINA</creator><creator>SCHUEPP-NIEWA, BARBARA</creator><scope>EVB</scope></search><sort><creationdate>20110531</creationdate><title>METHOD FOR PRODUCING HIGHLY TEXTURED, STRIP-SHAPED HIGH-TEMPERATURE SUPERCONDUCTORS</title><author>KNOTH, KERSTIN ; SCHLOBACH, BRIGITTE ; HUEHNE, RUBEN ; BAECKER, MICHAEL ; FALTER, MARTINA ; SCHUEPP-NIEWA, BARBARA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CA2575312C3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2011</creationdate><topic>ARTIFICIAL STONE</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CABLES</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>CONCRETE</topic><topic>CONDUCTORS</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INSULATORS</topic><topic>LIME, MAGNESIA</topic><topic>METALLURGY</topic><topic>REFRACTORIES</topic><topic>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</topic><topic>SLAG</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>KNOTH, KERSTIN</creatorcontrib><creatorcontrib>SCHLOBACH, BRIGITTE</creatorcontrib><creatorcontrib>HUEHNE, RUBEN</creatorcontrib><creatorcontrib>BAECKER, MICHAEL</creatorcontrib><creatorcontrib>FALTER, MARTINA</creatorcontrib><creatorcontrib>SCHUEPP-NIEWA, BARBARA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KNOTH, KERSTIN</au><au>SCHLOBACH, BRIGITTE</au><au>HUEHNE, RUBEN</au><au>BAECKER, MICHAEL</au><au>FALTER, MARTINA</au><au>SCHUEPP-NIEWA, BARBARA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR PRODUCING HIGHLY TEXTURED, STRIP-SHAPED HIGH-TEMPERATURE SUPERCONDUCTORS</title><date>2011-05-31</date><risdate>2011</risdate><abstract>Band-shaped HTSL with a metal substrate, at least one buffer layer that consists of zirconates, preferably La2Zr2O7, and/or rare-earth oxides, preferably CeO2/Gd2O3 and/or Y2O3, and with an HTSL layer that is found on the buffer layer, wherein the buffer layer has a texturing that results in discrete reflexes and not only with regard to diffraction rings in a RHEED measurement before application of an HTSL layer. Intermediate product for the production of band-shaped HTSL, with a metal substrate and at least one buffer layer that consists of La2Zr2O7, nickel oxide, cerium oxide, gadolinium-doped cerium oxide, magnesium oxide or yttrium oxide, wherein the buffer layer has a texturing that in the case of a RHEED measurement results in discrete reflexes and not only in diffraction rings. Band-shaped HTSL with a metal substrate, at least one buffer layer and one HTSL layer, wherein the buffer layer - the last buffer layer in the case of more than one buffer layer -- is textured to a great extent at least on its interface in the HTSL layer.
Procédé chimique humide de fabrication de supraconducteurs à haute température critique en forme de bandes comportant un substrat métallique, au moins une couche tampon et une couche de supraconducteur à haute température critique. L'objet de la présente invention est d'améliorer la capacité de transfert de texture de la couche tampon. A cet effet, on utilise un solvant polaire possédant au moins un groupe hydroxyle libre lors de la préparation d'une solution de revêtement qui est appliquée sur le substrat métallique et qui forme la couche tampon après séchage et recuisson.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng ; fre |
recordid | cdi_epo_espacenet_CA2575312C |
source | esp@cenet |
subjects | ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CABLES CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE CONDUCTORS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INSULATORS LIME, MAGNESIA METALLURGY REFRACTORIES SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE |
title | METHOD FOR PRODUCING HIGHLY TEXTURED, STRIP-SHAPED HIGH-TEMPERATURE SUPERCONDUCTORS |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T04%3A48%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KNOTH,%20KERSTIN&rft.date=2011-05-31&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECA2575312C%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |