MANUFACTURE OF CADMIUM MERCURY TELLURIDE

MANUFACTURE OF CADMIUM MERCURY TELLURIDE

A method of manufacture of cadmium mercury telluride (CMT) is disclosed. The method involves growing one or more buffer layers on a substrate by molecula r beam epitaxy (MBE). Subsequently at least one layer of cadmium mercury telluride, Hg1-XCdXTe where x is between (0) and (1) inclusive, is grown...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CAIRNS, JOHN WILLIAM, BUCKLE, LOUISE, HALL, DAVID JOHN, HAILS, JANET ELIZABETH, GRAHAM, ANDREW, GORDON, NEIL THOMSON, GIESS, JEAN
Format: Patent
Sprache:eng ; fre
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:A method of manufacture of cadmium mercury telluride (CMT) is disclosed. The method involves growing one or more buffer layers on a substrate by molecula r beam epitaxy (MBE). Subsequently at least one layer of cadmium mercury telluride, Hg1-XCdXTe where x is between (0) and (1) inclusive, is grown by metal organic vapour phase epitaxy (MOVPE) The use of MBE to grow buffer layers allows a range of substrates to be used for CMT growth. The MBE buffe r layers provide the correct orientation for later MOVPE growth of CMT and als o prevent chemical contamination of the CMT and attack of the substrate during MOVPE. The method also allows for device processing of the CMT layers to be performed with further MOVPE growth of crystalline CMT layers and/or passivation layers. The invention also relates to new devices formed by the method.