COMPOSITIONS FOR MELT PROCESSING HIGH TEMPERATURE SUPERCONDUCTOR

A melt processing method for bulk or thick film fabrication of RE123 superconductor material includes the steps of using Nd in the RE123 to increase the recrystallization speed of the RE123, and using a heavy rare earth in the RE123 to establish the peritectic melting point of the RE123 somewhere be...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: WOOLF, LAWRENCE D
Format: Patent
Sprache:eng ; fre
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator WOOLF, LAWRENCE D
description A melt processing method for bulk or thick film fabrication of RE123 superconductor material includes the steps of using Nd in the RE123 to increase the recrystallization speed of the RE123, and using a heavy rare earth in the RE123 to establish the peritectic melting point of the RE123 somewhere below the melting point of silver. Within these requirements, the method essentially includes heating the RE123 above its peritectic melting point, and then cooling the resultant decomposed material to recrystallize the RE123. The heavy rare earths to be used for lowering the RE123 peritectic melting temperature include Lu, Yb, Tm or Er or mixtures thereof. The addition of RE211, silver and the use of a low oxygen partial pressure also contribute to a lowering of the melting point of the RE123. When using Nd to accelerate the processing time, the RE123 can include a first component of Nd1-zRz123 and a second component of Nd1-yRy211. For these components, R is one of the heavy rare earths, z is between 0 and approximately 0.9, and y is between 0 and approximately 0.9.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CA2173273C</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CA2173273C</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CA2173273C3</originalsourceid><addsrcrecordid>eNrjZHBw9vcN8A_2DPH09wtWcPMPUvB19QlRCAjyd3YNDvb0c1fw8HT3UAhx9Q1wDXIMCQ1yVQgOBTKd_f1cQp1D_IN4GFjTEnOKU3mhNDeDvJtriLOHbmpBfnxqcUFicmpeakm8s6ORobmxkbmxszFhFQBQYSpq</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>COMPOSITIONS FOR MELT PROCESSING HIGH TEMPERATURE SUPERCONDUCTOR</title><source>esp@cenet</source><creator>WOOLF, LAWRENCE D</creator><creatorcontrib>WOOLF, LAWRENCE D</creatorcontrib><description>A melt processing method for bulk or thick film fabrication of RE123 superconductor material includes the steps of using Nd in the RE123 to increase the recrystallization speed of the RE123, and using a heavy rare earth in the RE123 to establish the peritectic melting point of the RE123 somewhere below the melting point of silver. Within these requirements, the method essentially includes heating the RE123 above its peritectic melting point, and then cooling the resultant decomposed material to recrystallize the RE123. The heavy rare earths to be used for lowering the RE123 peritectic melting temperature include Lu, Yb, Tm or Er or mixtures thereof. The addition of RE211, silver and the use of a low oxygen partial pressure also contribute to a lowering of the melting point of the RE123. When using Nd to accelerate the processing time, the RE123 can include a first component of Nd1-zRz123 and a second component of Nd1-yRy211. For these components, R is one of the heavy rare earths, z is between 0 and approximately 0.9, and y is between 0 and approximately 0.9.</description><edition>6</edition><language>eng ; fre</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CABLES ; CHEMISTRY ; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F ; CONDUCTORS ; CRYSTAL GROWTH ; ELECTRICITY ; INORGANIC CHEMISTRY ; INSULATORS ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20020709&amp;DB=EPODOC&amp;CC=CA&amp;NR=2173273C$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20020709&amp;DB=EPODOC&amp;CC=CA&amp;NR=2173273C$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WOOLF, LAWRENCE D</creatorcontrib><title>COMPOSITIONS FOR MELT PROCESSING HIGH TEMPERATURE SUPERCONDUCTOR</title><description>A melt processing method for bulk or thick film fabrication of RE123 superconductor material includes the steps of using Nd in the RE123 to increase the recrystallization speed of the RE123, and using a heavy rare earth in the RE123 to establish the peritectic melting point of the RE123 somewhere below the melting point of silver. Within these requirements, the method essentially includes heating the RE123 above its peritectic melting point, and then cooling the resultant decomposed material to recrystallize the RE123. The heavy rare earths to be used for lowering the RE123 peritectic melting temperature include Lu, Yb, Tm or Er or mixtures thereof. The addition of RE211, silver and the use of a low oxygen partial pressure also contribute to a lowering of the melting point of the RE123. When using Nd to accelerate the processing time, the RE123 can include a first component of Nd1-zRz123 and a second component of Nd1-yRy211. For these components, R is one of the heavy rare earths, z is between 0 and approximately 0.9, and y is between 0 and approximately 0.9.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CABLES</subject><subject>CHEMISTRY</subject><subject>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</subject><subject>CONDUCTORS</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRICITY</subject><subject>INORGANIC CHEMISTRY</subject><subject>INSULATORS</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHBw9vcN8A_2DPH09wtWcPMPUvB19QlRCAjyd3YNDvb0c1fw8HT3UAhx9Q1wDXIMCQ1yVQgOBTKd_f1cQp1D_IN4GFjTEnOKU3mhNDeDvJtriLOHbmpBfnxqcUFicmpeakm8s6ORobmxkbmxszFhFQBQYSpq</recordid><startdate>20020709</startdate><enddate>20020709</enddate><creator>WOOLF, LAWRENCE D</creator><scope>EVB</scope></search><sort><creationdate>20020709</creationdate><title>COMPOSITIONS FOR MELT PROCESSING HIGH TEMPERATURE SUPERCONDUCTOR</title><author>WOOLF, LAWRENCE D</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CA2173273C3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2002</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CABLES</topic><topic>CHEMISTRY</topic><topic>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</topic><topic>CONDUCTORS</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRICITY</topic><topic>INORGANIC CHEMISTRY</topic><topic>INSULATORS</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>WOOLF, LAWRENCE D</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WOOLF, LAWRENCE D</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>COMPOSITIONS FOR MELT PROCESSING HIGH TEMPERATURE SUPERCONDUCTOR</title><date>2002-07-09</date><risdate>2002</risdate><abstract>A melt processing method for bulk or thick film fabrication of RE123 superconductor material includes the steps of using Nd in the RE123 to increase the recrystallization speed of the RE123, and using a heavy rare earth in the RE123 to establish the peritectic melting point of the RE123 somewhere below the melting point of silver. Within these requirements, the method essentially includes heating the RE123 above its peritectic melting point, and then cooling the resultant decomposed material to recrystallize the RE123. The heavy rare earths to be used for lowering the RE123 peritectic melting temperature include Lu, Yb, Tm or Er or mixtures thereof. The addition of RE211, silver and the use of a low oxygen partial pressure also contribute to a lowering of the melting point of the RE123. When using Nd to accelerate the processing time, the RE123 can include a first component of Nd1-zRz123 and a second component of Nd1-yRy211. For these components, R is one of the heavy rare earths, z is between 0 and approximately 0.9, and y is between 0 and approximately 0.9.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; fre
recordid cdi_epo_espacenet_CA2173273C
source esp@cenet
subjects AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CABLES
CHEMISTRY
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F
CONDUCTORS
CRYSTAL GROWTH
ELECTRICITY
INORGANIC CHEMISTRY
INSULATORS
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
title COMPOSITIONS FOR MELT PROCESSING HIGH TEMPERATURE SUPERCONDUCTOR
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T09%3A12%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=WOOLF,%20LAWRENCE%20D&rft.date=2002-07-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECA2173273C%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true