Method and Apparatus for Stressing, Burning in and Reducing Leakage Current of Electronic Devices Using Microwave Radiation
The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging s...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; fre |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | GINN, KATHLEEN S MILLS, GAVIN T HALEY, JEFFREY A WALKER, GEORGE F YANG, JER-MING LAMAIRE, SUSAN J VIEHBECK, ALFRED LEWIS, DAVID A LONG, CLARENCE S REDMOND, TIMOTHY A TSANG, YUK L VAN HORN, JOSEPH J FREIERMUTH, PETER E |
| description | The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of rectifying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CA2098416A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CA2098416A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CA2098416A13</originalsourceid><addsrcrecordid>eNqNjDEKwkAQRdNYiHqHOYCCUREtY4xYmCZqLcPuJC6G2WV2NxZeXiMewOq_B48_TF4lhbvVgKwhcw4FQ_RQW4FzEPLecDOFXRT-ABj-dhXpqHo_ET6wIcijCHEAW0PRkgpi2SjYU2cUebj2J1AaJfaJHUGF2mAwlsfJoMbW0-S3owQOxSU_zsjZG3mHipjCLc8W8-1mla6zdPlH8gZyaEXp</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method and Apparatus for Stressing, Burning in and Reducing Leakage Current of Electronic Devices Using Microwave Radiation</title><source>esp@cenet</source><creator>GINN, KATHLEEN S ; MILLS, GAVIN T ; HALEY, JEFFREY A ; WALKER, GEORGE F ; YANG, JER-MING ; LAMAIRE, SUSAN J ; VIEHBECK, ALFRED ; LEWIS, DAVID A ; LONG, CLARENCE S ; REDMOND, TIMOTHY A ; TSANG, YUK L ; VAN HORN, JOSEPH J ; FREIERMUTH, PETER E</creator><creatorcontrib>GINN, KATHLEEN S ; MILLS, GAVIN T ; HALEY, JEFFREY A ; WALKER, GEORGE F ; YANG, JER-MING ; LAMAIRE, SUSAN J ; VIEHBECK, ALFRED ; LEWIS, DAVID A ; LONG, CLARENCE S ; REDMOND, TIMOTHY A ; TSANG, YUK L ; VAN HORN, JOSEPH J ; FREIERMUTH, PETER E</creatorcontrib><description>The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of rectifying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.</description><edition>5</edition><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>1994</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19940428&DB=EPODOC&CC=CA&NR=2098416A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19940428&DB=EPODOC&CC=CA&NR=2098416A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GINN, KATHLEEN S</creatorcontrib><creatorcontrib>MILLS, GAVIN T</creatorcontrib><creatorcontrib>HALEY, JEFFREY A</creatorcontrib><creatorcontrib>WALKER, GEORGE F</creatorcontrib><creatorcontrib>YANG, JER-MING</creatorcontrib><creatorcontrib>LAMAIRE, SUSAN J</creatorcontrib><creatorcontrib>VIEHBECK, ALFRED</creatorcontrib><creatorcontrib>LEWIS, DAVID A</creatorcontrib><creatorcontrib>LONG, CLARENCE S</creatorcontrib><creatorcontrib>REDMOND, TIMOTHY A</creatorcontrib><creatorcontrib>TSANG, YUK L</creatorcontrib><creatorcontrib>VAN HORN, JOSEPH J</creatorcontrib><creatorcontrib>FREIERMUTH, PETER E</creatorcontrib><title>Method and Apparatus for Stressing, Burning in and Reducing Leakage Current of Electronic Devices Using Microwave Radiation</title><description>The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of rectifying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1994</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjDEKwkAQRdNYiHqHOYCCUREtY4xYmCZqLcPuJC6G2WV2NxZeXiMewOq_B48_TF4lhbvVgKwhcw4FQ_RQW4FzEPLecDOFXRT-ABj-dhXpqHo_ET6wIcijCHEAW0PRkgpi2SjYU2cUebj2J1AaJfaJHUGF2mAwlsfJoMbW0-S3owQOxSU_zsjZG3mHipjCLc8W8-1mla6zdPlH8gZyaEXp</recordid><startdate>19940428</startdate><enddate>19940428</enddate><creator>GINN, KATHLEEN S</creator><creator>MILLS, GAVIN T</creator><creator>HALEY, JEFFREY A</creator><creator>WALKER, GEORGE F</creator><creator>YANG, JER-MING</creator><creator>LAMAIRE, SUSAN J</creator><creator>VIEHBECK, ALFRED</creator><creator>LEWIS, DAVID A</creator><creator>LONG, CLARENCE S</creator><creator>REDMOND, TIMOTHY A</creator><creator>TSANG, YUK L</creator><creator>VAN HORN, JOSEPH J</creator><creator>FREIERMUTH, PETER E</creator><scope>EVB</scope></search><sort><creationdate>19940428</creationdate><title>Method and Apparatus for Stressing, Burning in and Reducing Leakage Current of Electronic Devices Using Microwave Radiation</title><author>GINN, KATHLEEN S ; MILLS, GAVIN T ; HALEY, JEFFREY A ; WALKER, GEORGE F ; YANG, JER-MING ; LAMAIRE, SUSAN J ; VIEHBECK, ALFRED ; LEWIS, DAVID A ; LONG, CLARENCE S ; REDMOND, TIMOTHY A ; TSANG, YUK L ; VAN HORN, JOSEPH J ; FREIERMUTH, PETER E</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CA2098416A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>1994</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>GINN, KATHLEEN S</creatorcontrib><creatorcontrib>MILLS, GAVIN T</creatorcontrib><creatorcontrib>HALEY, JEFFREY A</creatorcontrib><creatorcontrib>WALKER, GEORGE F</creatorcontrib><creatorcontrib>YANG, JER-MING</creatorcontrib><creatorcontrib>LAMAIRE, SUSAN J</creatorcontrib><creatorcontrib>VIEHBECK, ALFRED</creatorcontrib><creatorcontrib>LEWIS, DAVID A</creatorcontrib><creatorcontrib>LONG, CLARENCE S</creatorcontrib><creatorcontrib>REDMOND, TIMOTHY A</creatorcontrib><creatorcontrib>TSANG, YUK L</creatorcontrib><creatorcontrib>VAN HORN, JOSEPH J</creatorcontrib><creatorcontrib>FREIERMUTH, PETER E</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GINN, KATHLEEN S</au><au>MILLS, GAVIN T</au><au>HALEY, JEFFREY A</au><au>WALKER, GEORGE F</au><au>YANG, JER-MING</au><au>LAMAIRE, SUSAN J</au><au>VIEHBECK, ALFRED</au><au>LEWIS, DAVID A</au><au>LONG, CLARENCE S</au><au>REDMOND, TIMOTHY A</au><au>TSANG, YUK L</au><au>VAN HORN, JOSEPH J</au><au>FREIERMUTH, PETER E</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method and Apparatus for Stressing, Burning in and Reducing Leakage Current of Electronic Devices Using Microwave Radiation</title><date>1994-04-28</date><risdate>1994</risdate><abstract>The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of rectifying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.</abstract><edition>5</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; fre |
| recordid | cdi_epo_espacenet_CA2098416A1 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | Method and Apparatus for Stressing, Burning in and Reducing Leakage Current of Electronic Devices Using Microwave Radiation |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T20%3A32%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=GINN,%20KATHLEEN%20S&rft.date=1994-04-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECA2098416A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |