PASSIVATION OF GALLIUM ARSENIDE ELECTRON DEVICES

PASSIVATION OF GALLIUM ARSENIDE ELECTRON DEVICES

A method of passivating a gallium arsenide electronic device by depositing a sulfide film on a portion on the substrate to be passivated for providing an ideal interface layer wherein surface state density is substantially reduced. The resulting electrical performance of the device is significantly...

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Hauptverfasser: NOTTENBURG, RICHARD N, SANDROFF, CLAUDE J
Format: Patent
Sprache:eng ; fre
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator NOTTENBURG, RICHARD N
SANDROFF, CLAUDE J
description A method of passivating a gallium arsenide electronic device by depositing a sulfide film on a portion on the substrate to be passivated for providing an ideal interface layer wherein surface state density is substantially reduced. The resulting electrical performance of the device is significantly greater than similar devices which have not been subject to passivation. The device may be a heterojunction bipolar transistor, PIN diode or field effect transistor.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title PASSIVATION OF GALLIUM ARSENIDE ELECTRON DEVICES
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