LOW TEMPERATURE PLASMA NITRIDATION PROCESS AND APPLICATIONS OF NITRIDE FILMS FORMED THEREBY

A silicon nitride layer is prepared on the surface of a silicon substrate by carrying out a surface reaction on the substrate in a vacuum chamber that contains an electrode which is capacitively coupled to an rf generator. A second electrode within the chamber, or a metal wall of the chamber itself,...

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Bibliographische Detailangaben

Hauptverfasser:	ANAND, KRANTI V, CAIRNS, BRUCE R, KEYSER, THOMAS, BARRY, MICHAEL L, PETRO, WILLIAM G
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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