TRENCH TRANSISTOR

TRENCH TRANSISTOR The specification describes a new MOS transistor structure in which the source gate and drain are formed within a trench in the semiconductor substrate. The gate width is determined by the depth of the trench and can be increased substantially without increasing the surface area oc...

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1. Verfasser:	LANCASTER, LOREN T
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	LANCASTER, LOREN T
description	TRENCH TRANSISTOR The specification describes a new MOS transistor structure in which the source gate and drain are formed within a trench in the semiconductor substrate. The gate width is determined by the depth of the trench and can be increased substantially without increasing the surface area occupied by the transistor. The result is a transistor with exceptionally high gain for a given surface area. Forming the transistor within and over a series of trenches further enhances this effect.
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language	eng ; fre
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	TRENCH TRANSISTOR
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