MAGNETIC DEVICES UTILIZING GARNET EPITAXIAL MATERIALS
BLANK, S. L. 7-15-16 MAGNETIC DEVICES UTILIZING GARNET EPITAXIAL MATERIALS The application describes magnetic bubble devices using new magnetic materials. The materials are based on the prototype garnet (YIG) in which the dodecahedral site is substituted with lanthanum and samarium or europium. Thes...
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description | BLANK, S. L. 7-15-16 MAGNETIC DEVICES UTILIZING GARNET EPITAXIAL MATERIALS The application describes magnetic bubble devices using new magnetic materials. The materials are based on the prototype garnet (YIG) in which the dodecahedral site is substituted with lanthanum and samarium or europium. These mixed garnet compositions can be tailored to support very small bubbles, or to increase bubble mobility, or a desired combination of both. The new compositions are based on the recognition that lanthanum can be incorporated in the dodecahedral site to adjust the crystal lattice parameters while leaving the functional properties of the layer essentially unaltered. |
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L. 7-15-16 MAGNETIC DEVICES UTILIZING GARNET EPITAXIAL MATERIALS The application describes magnetic bubble devices using new magnetic materials. The materials are based on the prototype garnet (YIG) in which the dodecahedral site is substituted with lanthanum and samarium or europium. These mixed garnet compositions can be tailored to support very small bubbles, or to increase bubble mobility, or a desired combination of both. The new compositions are based on the recognition that lanthanum can be incorporated in the dodecahedral site to adjust the crystal lattice parameters while leaving the functional properties of the layer essentially unaltered.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRICITY ; INDUCTANCES ; INFORMATION STORAGE ; MAGNETS ; PHYSICS ; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES ; STATIC STORES ; TRANSFORMERS</subject><creationdate>1982</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19820525&DB=EPODOC&CC=CA&NR=1124399A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19820525&DB=EPODOC&CC=CA&NR=1124399A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BLANK, STUART L</creatorcontrib><creatorcontrib>WOLFE, RAYMOND</creatorcontrib><creatorcontrib>LECRAW, ROY C</creatorcontrib><title>MAGNETIC DEVICES UTILIZING GARNET EPITAXIAL MATERIALS</title><description>BLANK, S. L. 7-15-16 MAGNETIC DEVICES UTILIZING GARNET EPITAXIAL MATERIALS The application describes magnetic bubble devices using new magnetic materials. The materials are based on the prototype garnet (YIG) in which the dodecahedral site is substituted with lanthanum and samarium or europium. These mixed garnet compositions can be tailored to support very small bubbles, or to increase bubble mobility, or a desired combination of both. The new compositions are based on the recognition that lanthanum can be incorporated in the dodecahedral site to adjust the crystal lattice parameters while leaving the functional properties of the layer essentially unaltered.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRICITY</subject><subject>INDUCTANCES</subject><subject>INFORMATION STORAGE</subject><subject>MAGNETS</subject><subject>PHYSICS</subject><subject>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</subject><subject>STATIC STORES</subject><subject>TRANSFORMERS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1982</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD1dXT3cw3xdFZwcQ3zdHYNVggN8fTxjPL0c1dwdwwCSim4BniGOEZ4Ovoo-DqGuAYBGcE8DKxpiTnFqbxQmptB3s01xNlDN7UgPz61uCAxOTUvtSTe2dHQ0MjE2NLS0ZiwCgBiGybm</recordid><startdate>19820525</startdate><enddate>19820525</enddate><creator>BLANK, STUART L</creator><creator>WOLFE, RAYMOND</creator><creator>LECRAW, ROY C</creator><scope>EVB</scope></search><sort><creationdate>19820525</creationdate><title>MAGNETIC DEVICES UTILIZING GARNET EPITAXIAL MATERIALS</title><author>BLANK, STUART L ; WOLFE, RAYMOND ; LECRAW, ROY C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CA1124399A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>1982</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRICITY</topic><topic>INDUCTANCES</topic><topic>INFORMATION STORAGE</topic><topic>MAGNETS</topic><topic>PHYSICS</topic><topic>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</topic><topic>STATIC STORES</topic><topic>TRANSFORMERS</topic><toplevel>online_resources</toplevel><creatorcontrib>BLANK, STUART L</creatorcontrib><creatorcontrib>WOLFE, RAYMOND</creatorcontrib><creatorcontrib>LECRAW, ROY C</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BLANK, STUART L</au><au>WOLFE, RAYMOND</au><au>LECRAW, ROY C</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MAGNETIC DEVICES UTILIZING GARNET EPITAXIAL MATERIALS</title><date>1982-05-25</date><risdate>1982</risdate><abstract>BLANK, S. L. 7-15-16 MAGNETIC DEVICES UTILIZING GARNET EPITAXIAL MATERIALS The application describes magnetic bubble devices using new magnetic materials. The materials are based on the prototype garnet (YIG) in which the dodecahedral site is substituted with lanthanum and samarium or europium. These mixed garnet compositions can be tailored to support very small bubbles, or to increase bubble mobility, or a desired combination of both. The new compositions are based on the recognition that lanthanum can be incorporated in the dodecahedral site to adjust the crystal lattice parameters while leaving the functional properties of the layer essentially unaltered.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRICITY INDUCTANCES INFORMATION STORAGE MAGNETS PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES STATIC STORES TRANSFORMERS |
title | MAGNETIC DEVICES UTILIZING GARNET EPITAXIAL MATERIALS |
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