SEMICONDUCTOR THYRISTOR DEVICE
A semiconductor thyristor device having a cathode region and an anode region comprises ballast means adjacent thereto. The device further comprises first and second electrode means which are positioned such that only the cathode region and the anode region respectively are contacted thereby. The pre...
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creator | BENDER, JOHN R ASSOUR, JACQUES M BATES, THERESA I NEILSON, JOHN M. S |
description | A semiconductor thyristor device having a cathode region and an anode region comprises ballast means adjacent thereto. The device further comprises first and second electrode means which are positioned such that only the cathode region and the anode region respectively are contacted thereby. The present structure is compatible with conventional device structures. |
format | Patent |
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The present structure is compatible with conventional device structures.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1980</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJALdvX1dPb3cwl1DvEPUgjxiAzyDAaxXFzDPJ1deRhY0xJzilN5oTQ3g7yba4izh25qQX58anFBYnJqXmpJvLOjoYGFgYWphaMxYRUAVR8gyg</recordid><startdate>19800701</startdate><enddate>19800701</enddate><creator>BENDER, JOHN R</creator><creator>ASSOUR, JACQUES M</creator><creator>BATES, THERESA I</creator><creator>NEILSON, JOHN M. S</creator><scope>EVB</scope></search><sort><creationdate>19800701</creationdate><title>SEMICONDUCTOR THYRISTOR DEVICE</title><author>BENDER, JOHN R ; ASSOUR, JACQUES M ; BATES, THERESA I ; NEILSON, JOHN M. 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S</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR THYRISTOR DEVICE</title><date>1980-07-01</date><risdate>1980</risdate><abstract>A semiconductor thyristor device having a cathode region and an anode region comprises ballast means adjacent thereto. The device further comprises first and second electrode means which are positioned such that only the cathode region and the anode region respectively are contacted thereby. The present structure is compatible with conventional device structures.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | SEMICONDUCTOR THYRISTOR DEVICE |
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