PROCESSO PARA O CRESCIMENTO DE CRISTAIS UNICOS CONFORMADOS DE COMPOSTOS DE METAL REFRATARIO,OTICAMENTE TRANSPARENTES
PCT No. PCT/SU87/00117 Sec. 371 Date Jul. 26, 1988 Sec. 102(e) Date Jul. 26, 1988 PCT Filed Oct. 23, 1987 PCT Pub. No. WO88/03967 PCT Pub. Date Jun. 2, 1988.A process for growing shaped single crystals of refractory optically transparent metal compounds comprising melting a starting stock in an iner...
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| creator | EFIM ALEXANDROVICH FREIMAN ALEXANDR LVOVICH ALISHOEV LEONID PETROVICH EGOROV DMITRY YAKOVLEVICH KRAVETSKY BORIS BENTSIONOVICH PELTS VIKTOR VASILIEVICH AVERYANOV LEV MARKOVICH ZATULOVSKY LEONID SAMUILOVICH OKUN |
| description | PCT No. PCT/SU87/00117 Sec. 371 Date Jul. 26, 1988 Sec. 102(e) Date Jul. 26, 1988 PCT Filed Oct. 23, 1987 PCT Pub. No. WO88/03967 PCT Pub. Date Jun. 2, 1988.A process for growing shaped single crystals of refractory optically transparent metal compounds comprising melting a starting stock in an inert gas atmosphere under the effect of heat evolved by a heater; the melt is continuously fed into a crystallization zone through a capillary system of a shaping unit, followed by pulling a single crystal from the crystallization zone and cooling thereof. Prior to melting of the starting stock one control particle thereof is placed into the crystallization zone and at the moment of melting of said particle the heater power P is recorded. Melting of the starting stock is conducted at a heater power of (1.04-1.1)P, fusing of the seed-at a power of (1.03-1.08)P, building-up of the single crystal-at a power of (1.02-1.08)P; pulling-at a power of (1.02-1.22)P. |
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No. WO88/03967 PCT Pub. Date Jun. 2, 1988.A process for growing shaped single crystals of refractory optically transparent metal compounds comprising melting a starting stock in an inert gas atmosphere under the effect of heat evolved by a heater; the melt is continuously fed into a crystallization zone through a capillary system of a shaping unit, followed by pulling a single crystal from the crystallization zone and cooling thereof. Prior to melting of the starting stock one control particle thereof is placed into the crystallization zone and at the moment of melting of said particle the heater power P is recorded. Melting of the starting stock is conducted at a heater power of (1.04-1.1)P, fusing of the seed-at a power of (1.03-1.08)P, building-up of the single crystal-at a power of (1.02-1.08)P; pulling-at a power of (1.02-1.22)P.</description><edition>4</edition><language>por</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1988</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19880628&DB=EPODOC&CC=BR&NR=8705753A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19880628&DB=EPODOC&CC=BR&NR=8705753A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>EFIM ALEXANDROVICH FREIMAN</creatorcontrib><creatorcontrib>ALEXANDR LVOVICH ALISHOEV</creatorcontrib><creatorcontrib>LEONID PETROVICH EGOROV</creatorcontrib><creatorcontrib>DMITRY YAKOVLEVICH KRAVETSKY</creatorcontrib><creatorcontrib>BORIS BENTSIONOVICH PELTS</creatorcontrib><creatorcontrib>VIKTOR VASILIEVICH AVERYANOV</creatorcontrib><creatorcontrib>LEV MARKOVICH ZATULOVSKY</creatorcontrib><creatorcontrib>LEONID SAMUILOVICH OKUN</creatorcontrib><title>PROCESSO PARA O CRESCIMENTO DE CRISTAIS UNICOS CONFORMADOS DE COMPOSTOS DE METAL REFRATARIO,OTICAMENTE TRANSPARENTES</title><description>PCT No. PCT/SU87/00117 Sec. 371 Date Jul. 26, 1988 Sec. 102(e) Date Jul. 26, 1988 PCT Filed Oct. 23, 1987 PCT Pub. No. WO88/03967 PCT Pub. Date Jun. 2, 1988.A process for growing shaped single crystals of refractory optically transparent metal compounds comprising melting a starting stock in an inert gas atmosphere under the effect of heat evolved by a heater; the melt is continuously fed into a crystallization zone through a capillary system of a shaping unit, followed by pulling a single crystal from the crystallization zone and cooling thereof. Prior to melting of the starting stock one control particle thereof is placed into the crystallization zone and at the moment of melting of said particle the heater power P is recorded. Melting of the starting stock is conducted at a heater power of (1.04-1.1)P, fusing of the seed-at a power of (1.03-1.08)P, building-up of the single crystal-at a power of (1.02-1.08)P; pulling-at a power of (1.02-1.22)P.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1988</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqFjcEKwkAMRHvxIOo3mA9QEEqp17hNccHdlCQ9lyLrSbTQ_j-26N3TzGOGmXU2NcKOVBkaFAQGJ6TOB4rGUNGMXg29Qhu9YwXHsWYJWM1-iTk0rPaFQIY3EKoFDcXzgc07XKYITDDqfLGAbrPVo3-OaffTTbavydz1mIZ3l8ahv6dXmrqLnMtTURY55v8bHwGUOJE</recordid><startdate>19880628</startdate><enddate>19880628</enddate><creator>EFIM ALEXANDROVICH FREIMAN</creator><creator>ALEXANDR LVOVICH ALISHOEV</creator><creator>LEONID PETROVICH EGOROV</creator><creator>DMITRY YAKOVLEVICH KRAVETSKY</creator><creator>BORIS BENTSIONOVICH PELTS</creator><creator>VIKTOR VASILIEVICH AVERYANOV</creator><creator>LEV MARKOVICH ZATULOVSKY</creator><creator>LEONID SAMUILOVICH OKUN</creator><scope>EVB</scope></search><sort><creationdate>19880628</creationdate><title>PROCESSO PARA O CRESCIMENTO DE CRISTAIS UNICOS CONFORMADOS DE COMPOSTOS DE METAL REFRATARIO,OTICAMENTE TRANSPARENTES</title><author>EFIM ALEXANDROVICH FREIMAN ; ALEXANDR LVOVICH ALISHOEV ; LEONID PETROVICH EGOROV ; DMITRY YAKOVLEVICH KRAVETSKY ; BORIS BENTSIONOVICH PELTS ; VIKTOR VASILIEVICH AVERYANOV ; LEV MARKOVICH ZATULOVSKY ; LEONID SAMUILOVICH OKUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_BR8705753A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>por</language><creationdate>1988</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>EFIM ALEXANDROVICH FREIMAN</creatorcontrib><creatorcontrib>ALEXANDR LVOVICH ALISHOEV</creatorcontrib><creatorcontrib>LEONID PETROVICH EGOROV</creatorcontrib><creatorcontrib>DMITRY YAKOVLEVICH KRAVETSKY</creatorcontrib><creatorcontrib>BORIS BENTSIONOVICH PELTS</creatorcontrib><creatorcontrib>VIKTOR VASILIEVICH AVERYANOV</creatorcontrib><creatorcontrib>LEV MARKOVICH ZATULOVSKY</creatorcontrib><creatorcontrib>LEONID SAMUILOVICH OKUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>EFIM ALEXANDROVICH FREIMAN</au><au>ALEXANDR LVOVICH ALISHOEV</au><au>LEONID PETROVICH EGOROV</au><au>DMITRY YAKOVLEVICH KRAVETSKY</au><au>BORIS BENTSIONOVICH PELTS</au><au>VIKTOR VASILIEVICH AVERYANOV</au><au>LEV MARKOVICH ZATULOVSKY</au><au>LEONID SAMUILOVICH OKUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PROCESSO PARA O CRESCIMENTO DE CRISTAIS UNICOS CONFORMADOS DE COMPOSTOS DE METAL REFRATARIO,OTICAMENTE TRANSPARENTES</title><date>1988-06-28</date><risdate>1988</risdate><abstract>PCT No. PCT/SU87/00117 Sec. 371 Date Jul. 26, 1988 Sec. 102(e) Date Jul. 26, 1988 PCT Filed Oct. 23, 1987 PCT Pub. No. WO88/03967 PCT Pub. Date Jun. 2, 1988.A process for growing shaped single crystals of refractory optically transparent metal compounds comprising melting a starting stock in an inert gas atmosphere under the effect of heat evolved by a heater; the melt is continuously fed into a crystallization zone through a capillary system of a shaping unit, followed by pulling a single crystal from the crystallization zone and cooling thereof. Prior to melting of the starting stock one control particle thereof is placed into the crystallization zone and at the moment of melting of said particle the heater power P is recorded. Melting of the starting stock is conducted at a heater power of (1.04-1.1)P, fusing of the seed-at a power of (1.03-1.08)P, building-up of the single crystal-at a power of (1.02-1.08)P; pulling-at a power of (1.02-1.22)P.</abstract><edition>4</edition><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | PROCESSO PARA O CRESCIMENTO DE CRISTAIS UNICOS CONFORMADOS DE COMPOSTOS DE METAL REFRATARIO,OTICAMENTE TRANSPARENTES |
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