METHOD FOR THE FORMATION OF OPTICAL IMAGE

The method is applicable in optical recording of information and in the technology for the production of photo masks. It makes use of layers of amorphous SiC:H material which has advantages in its use for makimg different optoelectron instruments in cases when the working medium is chemically aggressive, has relatively hifgh temperatures, radiation effect and others, and of particular importance are their optical properties and capability for their control by different methods including ionic implantation. The latter is of importance for the technology of the ionic microbeams and the capability formed in this way to form submicron optical images. The method consists of controlling and monitoring of the width of the optical forbidden zone of amorphous SiC:H by the introduction of different concentrations of suitable admixture elements by ionic implantation. The optical absorbtion change produced, or optical permeability, respectively, can be used for the formation of a preset image in the layer which can be attained, for example, by a suitable mask covering part of its surface, or by computer controlled focused ionic beam securing the formation of an image submicron dimensions.