CELLULE PHOTOVOLTAIQUE

The invention provides photovoltaic cells of new design in which the two semiconductors have lattice parameters which differ by more than 5%. The n-type semiconductor material is constituted by high conductivity CdS doped with indium in a percentage higher than 1%, and the p-type semiconductor mater...

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Hauptverfasser: E. SCAFE, F. GALLUZZI, F. LOSCIALE, P. ALESSANDRINI, L. DE ANGELIS
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creator E. SCAFE
F. GALLUZZI
F. LOSCIALE
P. ALESSANDRINI
L. DE ANGELIS
description The invention provides photovoltaic cells of new design in which the two semiconductors have lattice parameters which differ by more than 5%. The n-type semiconductor material is constituted by high conductivity CdS doped with indium in a percentage higher than 1%, and the p-type semiconductor material is constituted by Si. The active surface of said cells is equal to or greater than 1.5 cm2.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_BE885167A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>BE885167A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_BE885167A3</originalsourceid><addsrcrecordid>eNrjZBBzdvXxCfVxVQjw8A_xD_P3CXH0DAx15WFgTUvMKU7lhdLcDHJuriHOHrqpBfnxqcUFicmpeakl8U6uFhamhmbmjsYEFQAAHZYeMw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CELLULE PHOTOVOLTAIQUE</title><source>esp@cenet</source><creator>E. SCAFE ; F. GALLUZZI ; F. LOSCIALE ; P. ALESSANDRINI ; L. DE ANGELIS</creator><creatorcontrib>E. SCAFE ; F. GALLUZZI ; F. LOSCIALE ; P. ALESSANDRINI ; L. DE ANGELIS</creatorcontrib><description>The invention provides photovoltaic cells of new design in which the two semiconductors have lattice parameters which differ by more than 5%. The n-type semiconductor material is constituted by high conductivity CdS doped with indium in a percentage higher than 1%, and the p-type semiconductor material is constituted by Si. The active surface of said cells is equal to or greater than 1.5 cm2.</description><language>fre</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1981</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19810310&amp;DB=EPODOC&amp;CC=BE&amp;NR=885167A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19810310&amp;DB=EPODOC&amp;CC=BE&amp;NR=885167A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>E. SCAFE</creatorcontrib><creatorcontrib>F. GALLUZZI</creatorcontrib><creatorcontrib>F. LOSCIALE</creatorcontrib><creatorcontrib>P. ALESSANDRINI</creatorcontrib><creatorcontrib>L. DE ANGELIS</creatorcontrib><title>CELLULE PHOTOVOLTAIQUE</title><description>The invention provides photovoltaic cells of new design in which the two semiconductors have lattice parameters which differ by more than 5%. The n-type semiconductor material is constituted by high conductivity CdS doped with indium in a percentage higher than 1%, and the p-type semiconductor material is constituted by Si. The active surface of said cells is equal to or greater than 1.5 cm2.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1981</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBBzdvXxCfVxVQjw8A_xD_P3CXH0DAx15WFgTUvMKU7lhdLcDHJuriHOHrqpBfnxqcUFicmpeakl8U6uFhamhmbmjsYEFQAAHZYeMw</recordid><startdate>19810310</startdate><enddate>19810310</enddate><creator>E. SCAFE</creator><creator>F. GALLUZZI</creator><creator>F. LOSCIALE</creator><creator>P. ALESSANDRINI</creator><creator>L. DE ANGELIS</creator><scope>EVB</scope></search><sort><creationdate>19810310</creationdate><title>CELLULE PHOTOVOLTAIQUE</title><author>E. SCAFE ; F. GALLUZZI ; F. LOSCIALE ; P. ALESSANDRINI ; L. DE ANGELIS</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_BE885167A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>fre</language><creationdate>1981</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>E. SCAFE</creatorcontrib><creatorcontrib>F. GALLUZZI</creatorcontrib><creatorcontrib>F. LOSCIALE</creatorcontrib><creatorcontrib>P. ALESSANDRINI</creatorcontrib><creatorcontrib>L. DE ANGELIS</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>E. SCAFE</au><au>F. GALLUZZI</au><au>F. LOSCIALE</au><au>P. ALESSANDRINI</au><au>L. DE ANGELIS</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CELLULE PHOTOVOLTAIQUE</title><date>1981-03-10</date><risdate>1981</risdate><abstract>The invention provides photovoltaic cells of new design in which the two semiconductors have lattice parameters which differ by more than 5%. The n-type semiconductor material is constituted by high conductivity CdS doped with indium in a percentage higher than 1%, and the p-type semiconductor material is constituted by Si. The active surface of said cells is equal to or greater than 1.5 cm2.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title CELLULE PHOTOVOLTAIQUE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-17T13%3A41%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=E.%20SCAFE&rft.date=1981-03-10&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EBE885167A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true