CELLULE PHOTOVOLTAIQUE
The invention provides photovoltaic cells of new design in which the two semiconductors have lattice parameters which differ by more than 5%. The n-type semiconductor material is constituted by high conductivity CdS doped with indium in a percentage higher than 1%, and the p-type semiconductor mater...
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creator | E. SCAFE F. GALLUZZI F. LOSCIALE P. ALESSANDRINI L. DE ANGELIS |
description | The invention provides photovoltaic cells of new design in which the two semiconductors have lattice parameters which differ by more than 5%. The n-type semiconductor material is constituted by high conductivity CdS doped with indium in a percentage higher than 1%, and the p-type semiconductor material is constituted by Si. The active surface of said cells is equal to or greater than 1.5 cm2. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_BE885167A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>BE885167A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_BE885167A3</originalsourceid><addsrcrecordid>eNrjZBBzdvXxCfVxVQjw8A_xD_P3CXH0DAx15WFgTUvMKU7lhdLcDHJuriHOHrqpBfnxqcUFicmpeakl8U6uFhamhmbmjsYEFQAAHZYeMw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CELLULE PHOTOVOLTAIQUE</title><source>esp@cenet</source><creator>E. SCAFE ; F. GALLUZZI ; F. LOSCIALE ; P. ALESSANDRINI ; L. DE ANGELIS</creator><creatorcontrib>E. SCAFE ; F. GALLUZZI ; F. LOSCIALE ; P. ALESSANDRINI ; L. DE ANGELIS</creatorcontrib><description>The invention provides photovoltaic cells of new design in which the two semiconductors have lattice parameters which differ by more than 5%. The n-type semiconductor material is constituted by high conductivity CdS doped with indium in a percentage higher than 1%, and the p-type semiconductor material is constituted by Si. The active surface of said cells is equal to or greater than 1.5 cm2.</description><language>fre</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1981</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19810310&DB=EPODOC&CC=BE&NR=885167A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19810310&DB=EPODOC&CC=BE&NR=885167A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>E. SCAFE</creatorcontrib><creatorcontrib>F. GALLUZZI</creatorcontrib><creatorcontrib>F. LOSCIALE</creatorcontrib><creatorcontrib>P. ALESSANDRINI</creatorcontrib><creatorcontrib>L. DE ANGELIS</creatorcontrib><title>CELLULE PHOTOVOLTAIQUE</title><description>The invention provides photovoltaic cells of new design in which the two semiconductors have lattice parameters which differ by more than 5%. The n-type semiconductor material is constituted by high conductivity CdS doped with indium in a percentage higher than 1%, and the p-type semiconductor material is constituted by Si. The active surface of said cells is equal to or greater than 1.5 cm2.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1981</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBBzdvXxCfVxVQjw8A_xD_P3CXH0DAx15WFgTUvMKU7lhdLcDHJuriHOHrqpBfnxqcUFicmpeakl8U6uFhamhmbmjsYEFQAAHZYeMw</recordid><startdate>19810310</startdate><enddate>19810310</enddate><creator>E. SCAFE</creator><creator>F. GALLUZZI</creator><creator>F. LOSCIALE</creator><creator>P. ALESSANDRINI</creator><creator>L. DE ANGELIS</creator><scope>EVB</scope></search><sort><creationdate>19810310</creationdate><title>CELLULE PHOTOVOLTAIQUE</title><author>E. SCAFE ; F. GALLUZZI ; F. LOSCIALE ; P. ALESSANDRINI ; L. DE ANGELIS</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_BE885167A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>fre</language><creationdate>1981</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>E. SCAFE</creatorcontrib><creatorcontrib>F. GALLUZZI</creatorcontrib><creatorcontrib>F. LOSCIALE</creatorcontrib><creatorcontrib>P. ALESSANDRINI</creatorcontrib><creatorcontrib>L. DE ANGELIS</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>E. SCAFE</au><au>F. GALLUZZI</au><au>F. LOSCIALE</au><au>P. ALESSANDRINI</au><au>L. DE ANGELIS</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CELLULE PHOTOVOLTAIQUE</title><date>1981-03-10</date><risdate>1981</risdate><abstract>The invention provides photovoltaic cells of new design in which the two semiconductors have lattice parameters which differ by more than 5%. The n-type semiconductor material is constituted by high conductivity CdS doped with indium in a percentage higher than 1%, and the p-type semiconductor material is constituted by Si. The active surface of said cells is equal to or greater than 1.5 cm2.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | CELLULE PHOTOVOLTAIQUE |
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