CHEMICAL VAPOR DEPOSITION (CVD) PROCESS FOR PLASMA DEPOSITING SILICON CARBIDE FILMS ONTO A SUBSTRATE
A plasma CVD process for forming silicon carbide-type films onto a substrate comprising the steps of: (a) introducing a di-tert-butylsilane vapor into a CVD reaction zone containing said substrate on which a silcion carbide film is to be formed; (b) maintaining the temperature of said zone and said...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | HERMAN J BOEGLIN |
| description | A plasma CVD process for forming silicon carbide-type films onto a substrate comprising the steps of: (a) introducing a di-tert-butylsilane vapor into a CVD reaction zone containing said substrate on which a silcion carbide film is to be formed; (b) maintaining the temperature of said zone and said substrate at about 100 DEG C. to about 400 DEG C.; (c) maintaining the pressure in said zone at about 0.01 to about 10 torr; and (d) passing said gas into contact with said substrate while exciting said gas with a plasma for a period of time sufficient to form a silicon carbide-type film thereon, wherein said plasma is excited by DC or RF power of about 10 to about 500 watts. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_AU8312091A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>AU8312091A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_AU8312091A3</originalsourceid><addsrcrecordid>eNqFyrEOgjAQgGEWB6M-gzfqYCKy4Hhci1xSaNMrrIRonYyS4PtHBuPq9A__t0xuVOmaCQ106KwHpZ0VDmwb2FGn9uC8JS0C5TydQanxZ5oLCBum2RL6gpWGkk0tYJtgAUHaQoLHoNfJ4j48prj5dpVsSx2oOsTx1cdpHK7xGd89tnmWno7nFLP_4gNegjN5</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CHEMICAL VAPOR DEPOSITION (CVD) PROCESS FOR PLASMA DEPOSITING SILICON CARBIDE FILMS ONTO A SUBSTRATE</title><source>esp@cenet</source><creator>HERMAN J BOEGLIN</creator><creatorcontrib>HERMAN J BOEGLIN</creatorcontrib><description>A plasma CVD process for forming silicon carbide-type films onto a substrate comprising the steps of: (a) introducing a di-tert-butylsilane vapor into a CVD reaction zone containing said substrate on which a silcion carbide film is to be formed; (b) maintaining the temperature of said zone and said substrate at about 100 DEG C. to about 400 DEG C.; (c) maintaining the pressure in said zone at about 0.01 to about 10 torr; and (d) passing said gas into contact with said substrate while exciting said gas with a plasma for a period of time sufficient to form a silicon carbide-type film thereon, wherein said plasma is excited by DC or RF power of about 10 to about 500 watts.</description><edition>5</edition><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1992</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19920204&DB=EPODOC&CC=AU&NR=8312091A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19920204&DB=EPODOC&CC=AU&NR=8312091A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HERMAN J BOEGLIN</creatorcontrib><title>CHEMICAL VAPOR DEPOSITION (CVD) PROCESS FOR PLASMA DEPOSITING SILICON CARBIDE FILMS ONTO A SUBSTRATE</title><description>A plasma CVD process for forming silicon carbide-type films onto a substrate comprising the steps of: (a) introducing a di-tert-butylsilane vapor into a CVD reaction zone containing said substrate on which a silcion carbide film is to be formed; (b) maintaining the temperature of said zone and said substrate at about 100 DEG C. to about 400 DEG C.; (c) maintaining the pressure in said zone at about 0.01 to about 10 torr; and (d) passing said gas into contact with said substrate while exciting said gas with a plasma for a period of time sufficient to form a silicon carbide-type film thereon, wherein said plasma is excited by DC or RF power of about 10 to about 500 watts.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1992</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqFyrEOgjAQgGEWB6M-gzfqYCKy4Hhci1xSaNMrrIRonYyS4PtHBuPq9A__t0xuVOmaCQ106KwHpZ0VDmwb2FGn9uC8JS0C5TydQanxZ5oLCBum2RL6gpWGkk0tYJtgAUHaQoLHoNfJ4j48prj5dpVsSx2oOsTx1cdpHK7xGd89tnmWno7nFLP_4gNegjN5</recordid><startdate>19920204</startdate><enddate>19920204</enddate><creator>HERMAN J BOEGLIN</creator><scope>EVB</scope></search><sort><creationdate>19920204</creationdate><title>CHEMICAL VAPOR DEPOSITION (CVD) PROCESS FOR PLASMA DEPOSITING SILICON CARBIDE FILMS ONTO A SUBSTRATE</title><author>HERMAN J BOEGLIN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_AU8312091A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1992</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>HERMAN J BOEGLIN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HERMAN J BOEGLIN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CHEMICAL VAPOR DEPOSITION (CVD) PROCESS FOR PLASMA DEPOSITING SILICON CARBIDE FILMS ONTO A SUBSTRATE</title><date>1992-02-04</date><risdate>1992</risdate><abstract>A plasma CVD process for forming silicon carbide-type films onto a substrate comprising the steps of: (a) introducing a di-tert-butylsilane vapor into a CVD reaction zone containing said substrate on which a silcion carbide film is to be formed; (b) maintaining the temperature of said zone and said substrate at about 100 DEG C. to about 400 DEG C.; (c) maintaining the pressure in said zone at about 0.01 to about 10 torr; and (d) passing said gas into contact with said substrate while exciting said gas with a plasma for a period of time sufficient to form a silicon carbide-type film thereon, wherein said plasma is excited by DC or RF power of about 10 to about 500 watts.</abstract><edition>5</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_AU8312091A |
| source | esp@cenet |
| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | CHEMICAL VAPOR DEPOSITION (CVD) PROCESS FOR PLASMA DEPOSITING SILICON CARBIDE FILMS ONTO A SUBSTRATE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T16%3A13%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HERMAN%20J%20BOEGLIN&rft.date=1992-02-04&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EAU8312091A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |