SUPPORTED DIAMOND
Compacts are provided in which one or more single crystal diamonds, having a largest dimension of at least one millimeter, are embedded in the polycrystalline matrix which may be made of diamond ; cubic boron nitride (CBN): and silicon and silicon carbide bonded diamond, CBN, or mixtures of diamond...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | ROBERT CHARLES DEVRIES HAROLD PAUL BOVENKERK |
| description | Compacts are provided in which one or more single crystal diamonds, having a largest dimension of at least one millimeter, are embedded in the polycrystalline matrix which may be made of diamond ; cubic boron nitride (CBN): and silicon and silicon carbide bonded diamond, CBN, or mixtures of diamond and CBN. The single crystal diamond is from 10-90 volume percent of the compact. The compacts (except for the silicon and silicon carbide variety) are made by high pressure-high temperature processing generally in the range of 50Kbar at 1300 DEG C to 85 Kbar at 1750 DEG C. They have application in several fields, for example, wire drawing die blanks, cutting tool blanks, and anvils for high pressure apparatus. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_AU6111980A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>AU6111980A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_AU6111980A3</originalsourceid><addsrcrecordid>eNrjZBAMDg0I8A8KcXVRcPF09PX3c-FhYE1LzClO5YXS3Azybq4hzh66qQX58anFBYnJqXmpJfGOoWaGhoaWFgaOxoRVAAC6ER0U</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SUPPORTED DIAMOND</title><source>esp@cenet</source><creator>ROBERT CHARLES DEVRIES ; HAROLD PAUL BOVENKERK</creator><creatorcontrib>ROBERT CHARLES DEVRIES ; HAROLD PAUL BOVENKERK</creatorcontrib><description>Compacts are provided in which one or more single crystal diamonds, having a largest dimension of at least one millimeter, are embedded in the polycrystalline matrix which may be made of diamond ; cubic boron nitride (CBN): and silicon and silicon carbide bonded diamond, CBN, or mixtures of diamond and CBN. The single crystal diamond is from 10-90 volume percent of the compact. The compacts (except for the silicon and silicon carbide variety) are made by high pressure-high temperature processing generally in the range of 50Kbar at 1300 DEG C to 85 Kbar at 1750 DEG C. They have application in several fields, for example, wire drawing die blanks, cutting tool blanks, and anvils for high pressure apparatus.</description><language>eng</language><subject>AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKINGWITHOUT ESSENTIALLY REMOVING MATERIAL ; CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY ; COMBINED OPERATIONS ; MACHINE TOOLS ; MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES,OTHERWISE THAN BY ROLLING ; MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVINGMATERIAL ; METAL-WORKING NOT OTHERWISE PROVIDED FOR ; OTHER WORKING OF METAL ; PERFORMING OPERATIONS ; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL ; PUNCHING METAL ; THEIR RELEVANT APPARATUS ; TRANSPORTING ; UNIVERSAL MACHINE TOOLS</subject><creationdate>1981</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19810226&DB=EPODOC&CC=AU&NR=6111980A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25566,76549</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19810226&DB=EPODOC&CC=AU&NR=6111980A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ROBERT CHARLES DEVRIES</creatorcontrib><creatorcontrib>HAROLD PAUL BOVENKERK</creatorcontrib><title>SUPPORTED DIAMOND</title><description>Compacts are provided in which one or more single crystal diamonds, having a largest dimension of at least one millimeter, are embedded in the polycrystalline matrix which may be made of diamond ; cubic boron nitride (CBN): and silicon and silicon carbide bonded diamond, CBN, or mixtures of diamond and CBN. The single crystal diamond is from 10-90 volume percent of the compact. The compacts (except for the silicon and silicon carbide variety) are made by high pressure-high temperature processing generally in the range of 50Kbar at 1300 DEG C to 85 Kbar at 1750 DEG C. They have application in several fields, for example, wire drawing die blanks, cutting tool blanks, and anvils for high pressure apparatus.</description><subject>AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKINGWITHOUT ESSENTIALLY REMOVING MATERIAL</subject><subject>CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY</subject><subject>COMBINED OPERATIONS</subject><subject>MACHINE TOOLS</subject><subject>MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES,OTHERWISE THAN BY ROLLING</subject><subject>MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVINGMATERIAL</subject><subject>METAL-WORKING NOT OTHERWISE PROVIDED FOR</subject><subject>OTHER WORKING OF METAL</subject><subject>PERFORMING OPERATIONS</subject><subject>PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL</subject><subject>PUNCHING METAL</subject><subject>THEIR RELEVANT APPARATUS</subject><subject>TRANSPORTING</subject><subject>UNIVERSAL MACHINE TOOLS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1981</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAMDg0I8A8KcXVRcPF09PX3c-FhYE1LzClO5YXS3Azybq4hzh66qQX58anFBYnJqXmpJfGOoWaGhoaWFgaOxoRVAAC6ER0U</recordid><startdate>19810226</startdate><enddate>19810226</enddate><creator>ROBERT CHARLES DEVRIES</creator><creator>HAROLD PAUL BOVENKERK</creator><scope>EVB</scope></search><sort><creationdate>19810226</creationdate><title>SUPPORTED DIAMOND</title><author>ROBERT CHARLES DEVRIES ; HAROLD PAUL BOVENKERK</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_AU6111980A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1981</creationdate><topic>AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKINGWITHOUT ESSENTIALLY REMOVING MATERIAL</topic><topic>CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY</topic><topic>COMBINED OPERATIONS</topic><topic>MACHINE TOOLS</topic><topic>MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES,OTHERWISE THAN BY ROLLING</topic><topic>MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVINGMATERIAL</topic><topic>METAL-WORKING NOT OTHERWISE PROVIDED FOR</topic><topic>OTHER WORKING OF METAL</topic><topic>PERFORMING OPERATIONS</topic><topic>PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL</topic><topic>PUNCHING METAL</topic><topic>THEIR RELEVANT APPARATUS</topic><topic>TRANSPORTING</topic><topic>UNIVERSAL MACHINE TOOLS</topic><toplevel>online_resources</toplevel><creatorcontrib>ROBERT CHARLES DEVRIES</creatorcontrib><creatorcontrib>HAROLD PAUL BOVENKERK</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ROBERT CHARLES DEVRIES</au><au>HAROLD PAUL BOVENKERK</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SUPPORTED DIAMOND</title><date>1981-02-26</date><risdate>1981</risdate><abstract>Compacts are provided in which one or more single crystal diamonds, having a largest dimension of at least one millimeter, are embedded in the polycrystalline matrix which may be made of diamond ; cubic boron nitride (CBN): and silicon and silicon carbide bonded diamond, CBN, or mixtures of diamond and CBN. The single crystal diamond is from 10-90 volume percent of the compact. The compacts (except for the silicon and silicon carbide variety) are made by high pressure-high temperature processing generally in the range of 50Kbar at 1300 DEG C to 85 Kbar at 1750 DEG C. They have application in several fields, for example, wire drawing die blanks, cutting tool blanks, and anvils for high pressure apparatus.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_AU6111980A |
| source | esp@cenet |
| subjects | AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKINGWITHOUT ESSENTIALLY REMOVING MATERIAL CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY COMBINED OPERATIONS MACHINE TOOLS MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES,OTHERWISE THAN BY ROLLING MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVINGMATERIAL METAL-WORKING NOT OTHERWISE PROVIDED FOR OTHER WORKING OF METAL PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PUNCHING METAL THEIR RELEVANT APPARATUS TRANSPORTING UNIVERSAL MACHINE TOOLS |
| title | SUPPORTED DIAMOND |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-17T16%3A11%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ROBERT%20CHARLES%20DEVRIES&rft.date=1981-02-26&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EAU6111980A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |