SINTERED SILICON CARBIDE CERAMIC BODY OF HIGH ELECTRICAL RESISTIVITY
Sintered silicon carbide body having a D.C. electrical resistivity of at least 108 Ohm cm at 25°C, a density of at least 2.95 g/cm3 is formed upon sintering in a nitrogenous atmosphere at a temperature of about 2250°C or greater, a shaped body composed essentially of carbon or carbon source material...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | WOLFGANG D. G. BOECKER LAURENCE N. HAILEY CARL HEWES MCMURTRY |
| description | Sintered silicon carbide body having a D.C. electrical resistivity of at least 108 Ohm cm at 25°C, a density of at least 2.95 g/cm3 is formed upon sintering in a nitrogenous atmosphere at a temperature of about 2250°C or greater, a shaped body composed essentially of carbon or carbon source material in amount sufficient to provide up to 2.5 percent uncombined carbon; from about 0.4 to about 2.0 percent boron carbide; up to 25 percent of temporary binder and a balance of silicon carbide which is predominately alpha-phase. The shaped body additionally include other sintering aids such as Bn or A1 without destruction of desired high electrical resistivity. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_AU575011BB2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>AU575011BB2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_AU575011BB23</originalsourceid><addsrcrecordid>eNqNyrEKwjAQANAsDqL-w_2AYJXinFyu5iA2cImFTqXIOUlbqP-Pix_g9Ja3NT5zW0jIQ-bImFpAK449AZLYOyO45HtIDQS-BaBIWITRRhDKnAt3XPq92bzG96qHnzsDDRUMR13mQddlfOqkn8E-6mt9qirnzpc_yhfxPSta</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SINTERED SILICON CARBIDE CERAMIC BODY OF HIGH ELECTRICAL RESISTIVITY</title><source>esp@cenet</source><creator>WOLFGANG D. G. BOECKER ; LAURENCE N. HAILEY ; CARL HEWES MCMURTRY</creator><creatorcontrib>WOLFGANG D. G. BOECKER ; LAURENCE N. HAILEY ; CARL HEWES MCMURTRY</creatorcontrib><description>Sintered silicon carbide body having a D.C. electrical resistivity of at least 108 Ohm cm at 25°C, a density of at least 2.95 g/cm3 is formed upon sintering in a nitrogenous atmosphere at a temperature of about 2250°C or greater, a shaped body composed essentially of carbon or carbon source material in amount sufficient to provide up to 2.5 percent uncombined carbon; from about 0.4 to about 2.0 percent boron carbide; up to 25 percent of temporary binder and a balance of silicon carbide which is predominately alpha-phase. The shaped body additionally include other sintering aids such as Bn or A1 without destruction of desired high electrical resistivity.</description><edition>4</edition><language>eng</language><subject>ARTIFICIAL STONE ; BASIC ELECTRIC ELEMENTS ; CABLES ; CEMENTS ; CERAMICS ; CHEMISTRY ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; CONDUCTORS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INSULATORS ; LIME, MAGNESIA ; METALLURGY ; REFRACTORIES ; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES ; SEMICONDUCTOR DEVICES ; SLAG ; TREATMENT OF NATURAL STONE</subject><creationdate>1988</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19880714&DB=EPODOC&CC=AU&NR=575011B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19880714&DB=EPODOC&CC=AU&NR=575011B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WOLFGANG D. G. BOECKER</creatorcontrib><creatorcontrib>LAURENCE N. HAILEY</creatorcontrib><creatorcontrib>CARL HEWES MCMURTRY</creatorcontrib><title>SINTERED SILICON CARBIDE CERAMIC BODY OF HIGH ELECTRICAL RESISTIVITY</title><description>Sintered silicon carbide body having a D.C. electrical resistivity of at least 108 Ohm cm at 25°C, a density of at least 2.95 g/cm3 is formed upon sintering in a nitrogenous atmosphere at a temperature of about 2250°C or greater, a shaped body composed essentially of carbon or carbon source material in amount sufficient to provide up to 2.5 percent uncombined carbon; from about 0.4 to about 2.0 percent boron carbide; up to 25 percent of temporary binder and a balance of silicon carbide which is predominately alpha-phase. The shaped body additionally include other sintering aids such as Bn or A1 without destruction of desired high electrical resistivity.</description><subject>ARTIFICIAL STONE</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CABLES</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMISTRY</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>CONCRETE</subject><subject>CONDUCTORS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INSULATORS</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>REFRACTORIES</subject><subject>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SLAG</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1988</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEKwjAQANAsDqL-w_2AYJXinFyu5iA2cImFTqXIOUlbqP-Pix_g9Ja3NT5zW0jIQ-bImFpAK449AZLYOyO45HtIDQS-BaBIWITRRhDKnAt3XPq92bzG96qHnzsDDRUMR13mQddlfOqkn8E-6mt9qirnzpc_yhfxPSta</recordid><startdate>19880714</startdate><enddate>19880714</enddate><creator>WOLFGANG D. G. BOECKER</creator><creator>LAURENCE N. HAILEY</creator><creator>CARL HEWES MCMURTRY</creator><scope>EVB</scope></search><sort><creationdate>19880714</creationdate><title>SINTERED SILICON CARBIDE CERAMIC BODY OF HIGH ELECTRICAL RESISTIVITY</title><author>WOLFGANG D. G. BOECKER ; LAURENCE N. HAILEY ; CARL HEWES MCMURTRY</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_AU575011BB23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1988</creationdate><topic>ARTIFICIAL STONE</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CABLES</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMISTRY</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>CONCRETE</topic><topic>CONDUCTORS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INSULATORS</topic><topic>LIME, MAGNESIA</topic><topic>METALLURGY</topic><topic>REFRACTORIES</topic><topic>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SLAG</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>WOLFGANG D. G. BOECKER</creatorcontrib><creatorcontrib>LAURENCE N. HAILEY</creatorcontrib><creatorcontrib>CARL HEWES MCMURTRY</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WOLFGANG D. G. BOECKER</au><au>LAURENCE N. HAILEY</au><au>CARL HEWES MCMURTRY</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SINTERED SILICON CARBIDE CERAMIC BODY OF HIGH ELECTRICAL RESISTIVITY</title><date>1988-07-14</date><risdate>1988</risdate><abstract>Sintered silicon carbide body having a D.C. electrical resistivity of at least 108 Ohm cm at 25°C, a density of at least 2.95 g/cm3 is formed upon sintering in a nitrogenous atmosphere at a temperature of about 2250°C or greater, a shaped body composed essentially of carbon or carbon source material in amount sufficient to provide up to 2.5 percent uncombined carbon; from about 0.4 to about 2.0 percent boron carbide; up to 25 percent of temporary binder and a balance of silicon carbide which is predominately alpha-phase. The shaped body additionally include other sintering aids such as Bn or A1 without destruction of desired high electrical resistivity.</abstract><edition>4</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_AU575011BB2 |
| source | esp@cenet |
| subjects | ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CABLES CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE CONDUCTORS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INSULATORS LIME, MAGNESIA METALLURGY REFRACTORIES SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SEMICONDUCTOR DEVICES SLAG TREATMENT OF NATURAL STONE |
| title | SINTERED SILICON CARBIDE CERAMIC BODY OF HIGH ELECTRICAL RESISTIVITY |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T12%3A35%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=WOLFGANG%20D.%20G.%20BOECKER&rft.date=1988-07-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EAU575011BB2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |