Semiconductor device using a barrier layer
An enhancement mode semiconductor device has a barrier layer disposed between the gate electrode of the device and the semiconductor substrate underlying the gate electrode. The barrier layer increases the Schottky barrier height of the gate electrode-barrier layer-substrate interface so that the po...
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| creator | MARINO J. MARTINEZ JULIO COSTA NYLES W. CODY ERNEST SCHIRMANN |
| description | An enhancement mode semiconductor device has a barrier layer disposed between the gate electrode of the device and the semiconductor substrate underlying the gate electrode. The barrier layer increases the Schottky barrier height of the gate electrode-barrier layer-substrate interface so that the portion of the substrate underlying the gate electrode operates in an enhancement mode. The barrier layer is particularly useful ill compound semiconductor field effect transistors, and preferred materials for the barrier layer include aluminum gallium arsenide and indium gallium arsenide. |
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CODY ; ERNEST SCHIRMANN</creatorcontrib><description>An enhancement mode semiconductor device has a barrier layer disposed between the gate electrode of the device and the semiconductor substrate underlying the gate electrode. The barrier layer increases the Schottky barrier height of the gate electrode-barrier layer-substrate interface so that the portion of the substrate underlying the gate electrode operates in an enhancement mode. The barrier layer is particularly useful ill compound semiconductor field effect transistors, and preferred materials for the barrier layer include aluminum gallium arsenide and indium gallium arsenide.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2001</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20011112&DB=EPODOC&CC=AU&NR=5371401A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20011112&DB=EPODOC&CC=AU&NR=5371401A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MARINO J. MARTINEZ</creatorcontrib><creatorcontrib>JULIO COSTA</creatorcontrib><creatorcontrib>NYLES W. CODY</creatorcontrib><creatorcontrib>ERNEST SCHIRMANN</creatorcontrib><title>Semiconductor device using a barrier layer</title><description>An enhancement mode semiconductor device has a barrier layer disposed between the gate electrode of the device and the semiconductor substrate underlying the gate electrode. The barrier layer increases the Schottky barrier height of the gate electrode-barrier layer-substrate interface so that the portion of the substrate underlying the gate electrode operates in an enhancement mode. The barrier layer is particularly useful ill compound semiconductor field effect transistors, and preferred materials for the barrier layer include aluminum gallium arsenide and indium gallium arsenide.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2001</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAKTs3NTM7PSylNLskvUkhJLctMTlUoLc7MS1dIVEhKLCrKTC1SyEmsTC3iYWBNS8wpTuWF0twM8m6uIc4euqkF-fGpxQWJyal5qSXxjqGmxuaGJgaGjsaEVQAAmmYoOw</recordid><startdate>20011112</startdate><enddate>20011112</enddate><creator>MARINO J. MARTINEZ</creator><creator>JULIO COSTA</creator><creator>NYLES W. 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The barrier layer is particularly useful ill compound semiconductor field effect transistors, and preferred materials for the barrier layer include aluminum gallium arsenide and indium gallium arsenide.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor device using a barrier layer |
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