LIQUID PHASE EPITAXIAL FILM ON A WAFER
A method of forming an improved liquid phase epitaxial film on a wafer. The resultant film has improved uniformity of magnetic properties, such as the collapse field (Ho), across the surface of the wafer as well as being substantially free of mesa defects on the surface. The method includes the step...
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| creator | GUIDO GALLI JOHN EDWARD DAVIES |
| description | A method of forming an improved liquid phase epitaxial film on a wafer. The resultant film has improved uniformity of magnetic properties, such as the collapse field (Ho), across the surface of the wafer as well as being substantially free of mesa defects on the surface. The method includes the step of growing the liquid phase epitaxial film while the wafer is in the horizontal plane. The wafer is removed from the melt while the wafer is tilted at an angle from the horizontal plane so that the melt may drain from the wafer. Then the wafer is positioned in a horizontal plane again and rotated to remove the remaining melt droplets from the edge of the wafer. In a preferred embodiment, a plurality of wafers are positioned in a wafer holding means so that the wafers are arranged in a stacked manner having substantially the same space between adjacent wafers. Wafers may also be stacked in pairs that are back-to-back while carrying out this method. |
| format | Patent |
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The resultant film has improved uniformity of magnetic properties, such as the collapse field (Ho), across the surface of the wafer as well as being substantially free of mesa defects on the surface. The method includes the step of growing the liquid phase epitaxial film while the wafer is in the horizontal plane. The wafer is removed from the melt while the wafer is tilted at an angle from the horizontal plane so that the melt may drain from the wafer. Then the wafer is positioned in a horizontal plane again and rotated to remove the remaining melt droplets from the edge of the wafer. In a preferred embodiment, a plurality of wafers are positioned in a wafer holding means so that the wafers are arranged in a stacked manner having substantially the same space between adjacent wafers. Wafers may also be stacked in pairs that are back-to-back while carrying out this method.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INDUCTANCES ; MAGNETS ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; TRANSFORMERS ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1980</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19800306&DB=EPODOC&CC=AU&NR=4871879A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76302</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19800306&DB=EPODOC&CC=AU&NR=4871879A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GUIDO GALLI</creatorcontrib><creatorcontrib>JOHN EDWARD DAVIES</creatorcontrib><title>LIQUID PHASE EPITAXIAL FILM ON A WAFER</title><description>A method of forming an improved liquid phase epitaxial film on a wafer. The resultant film has improved uniformity of magnetic properties, such as the collapse field (Ho), across the surface of the wafer as well as being substantially free of mesa defects on the surface. The method includes the step of growing the liquid phase epitaxial film while the wafer is in the horizontal plane. The wafer is removed from the melt while the wafer is tilted at an angle from the horizontal plane so that the melt may drain from the wafer. Then the wafer is positioned in a horizontal plane again and rotated to remove the remaining melt droplets from the edge of the wafer. In a preferred embodiment, a plurality of wafers are positioned in a wafer holding means so that the wafers are arranged in a stacked manner having substantially the same space between adjacent wafers. 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The resultant film has improved uniformity of magnetic properties, such as the collapse field (Ho), across the surface of the wafer as well as being substantially free of mesa defects on the surface. The method includes the step of growing the liquid phase epitaxial film while the wafer is in the horizontal plane. The wafer is removed from the melt while the wafer is tilted at an angle from the horizontal plane so that the melt may drain from the wafer. Then the wafer is positioned in a horizontal plane again and rotated to remove the remaining melt droplets from the edge of the wafer. In a preferred embodiment, a plurality of wafers are positioned in a wafer holding means so that the wafers are arranged in a stacked manner having substantially the same space between adjacent wafers. Wafers may also be stacked in pairs that are back-to-back while carrying out this method.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDUCTANCES MAGNETS METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSFORMERS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | LIQUID PHASE EPITAXIAL FILM ON A WAFER |
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