High voltage mosfet structures

High voltage mosfet structures

A power MOSFET device that achieves low power loss characteristics by minimizing source-to-drain channel on-resistance, including a semiconductor block having a first and a second surfaces, a source region, a drain region, a drift region (106) within the semiconductor block, and a body region betwee...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: NESTORE POLCE, SCOTT JONES, MAXIME ZAFRANI, JOHN M. S. NEILSON
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator NESTORE POLCE
SCOTT JONES
MAXIME ZAFRANI
JOHN M. S. NEILSON
description A power MOSFET device that achieves low power loss characteristics by minimizing source-to-drain channel on-resistance, including a semiconductor block having a first and a second surfaces, a source region, a drain region, a drift region (106) within the semiconductor block, and a body region between the first surface and the drift region (106). The device further includes at least one voltage divider (104) disposed within the semiconductor block. The voltage divider has a first end adjacent to the first surface and electrically coupled to the source region, and a second end extending through and electrically coupled to the drain region.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_AU4702600A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>AU4702600A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_AU4702600A3</originalsourceid><addsrcrecordid>eNrjZJDzyEzPUCjLzylJTE9VyM0vTkstUSguKSpNLiktSi3mYWBNS8wpTuWF0twM8m6uIc4euqkF-fGpxQWJyal5qSXxjqEm5gZGZgYGjsaEVQAAhS4j9Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>High voltage mosfet structures</title><source>esp@cenet</source><creator>NESTORE POLCE ; SCOTT JONES ; MAXIME ZAFRANI ; JOHN M. S. NEILSON</creator><creatorcontrib>NESTORE POLCE ; SCOTT JONES ; MAXIME ZAFRANI ; JOHN M. S. NEILSON</creatorcontrib><description>A power MOSFET device that achieves low power loss characteristics by minimizing source-to-drain channel on-resistance, including a semiconductor block having a first and a second surfaces, a source region, a drain region, a drift region (106) within the semiconductor block, and a body region between the first surface and the drift region (106). The device further includes at least one voltage divider (104) disposed within the semiconductor block. The voltage divider has a first end adjacent to the first surface and electrically coupled to the source region, and a second end extending through and electrically coupled to the drain region.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2000</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20001121&amp;DB=EPODOC&amp;CC=AU&amp;NR=4702600A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20001121&amp;DB=EPODOC&amp;CC=AU&amp;NR=4702600A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NESTORE POLCE</creatorcontrib><creatorcontrib>SCOTT JONES</creatorcontrib><creatorcontrib>MAXIME ZAFRANI</creatorcontrib><creatorcontrib>JOHN M. S. NEILSON</creatorcontrib><title>High voltage mosfet structures</title><description>A power MOSFET device that achieves low power loss characteristics by minimizing source-to-drain channel on-resistance, including a semiconductor block having a first and a second surfaces, a source region, a drain region, a drift region (106) within the semiconductor block, and a body region between the first surface and the drift region (106). The device further includes at least one voltage divider (104) disposed within the semiconductor block. The voltage divider has a first end adjacent to the first surface and electrically coupled to the source region, and a second end extending through and electrically coupled to the drain region.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2000</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJDzyEzPUCjLzylJTE9VyM0vTkstUSguKSpNLiktSi3mYWBNS8wpTuWF0twM8m6uIc4euqkF-fGpxQWJyal5qSXxjqEm5gZGZgYGjsaEVQAAhS4j9Q</recordid><startdate>20001121</startdate><enddate>20001121</enddate><creator>NESTORE POLCE</creator><creator>SCOTT JONES</creator><creator>MAXIME ZAFRANI</creator><creator>JOHN M. S. NEILSON</creator><scope>EVB</scope></search><sort><creationdate>20001121</creationdate><title>High voltage mosfet structures</title><author>NESTORE POLCE ; SCOTT JONES ; MAXIME ZAFRANI ; JOHN M. S. NEILSON</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_AU4702600A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2000</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>NESTORE POLCE</creatorcontrib><creatorcontrib>SCOTT JONES</creatorcontrib><creatorcontrib>MAXIME ZAFRANI</creatorcontrib><creatorcontrib>JOHN M. S. NEILSON</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NESTORE POLCE</au><au>SCOTT JONES</au><au>MAXIME ZAFRANI</au><au>JOHN M. S. NEILSON</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>High voltage mosfet structures</title><date>2000-11-21</date><risdate>2000</risdate><abstract>A power MOSFET device that achieves low power loss characteristics by minimizing source-to-drain channel on-resistance, including a semiconductor block having a first and a second surfaces, a source region, a drain region, a drift region (106) within the semiconductor block, and a body region between the first surface and the drift region (106). The device further includes at least one voltage divider (104) disposed within the semiconductor block. The voltage divider has a first end adjacent to the first surface and electrically coupled to the source region, and a second end extending through and electrically coupled to the drain region.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_AU4702600A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title High voltage mosfet structures
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T20%3A08%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NESTORE%20POLCE&rft.date=2000-11-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EAU4702600A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true