LED with internally confined current injection area

Methods and structures for forming arrays of LED devices are disclosed. The LED devices may include an internally confined current injection area to reduce non radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer,...

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Bibliographische Detailangaben
Hauptverfasser: HAEGER, Daniel Arthur, MCGRODDY, Kelly, CHAN, Clayton Ka Tsun, HU, Hsin-Hua, BIBL, Andreas
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:Methods and structures for forming arrays of LED devices are disclosed. The LED devices may include an internally confined current injection area to reduce non radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.