Hybrid polysilicon heterojunction back contact cell
HYBRID POLYSILICON HETEROJUNCTION BACK CONTACT CELL A method for manufacturing a solar cell (100) comprising a silicon substrate (102). The silicon substrate (102) having a first side and a second side opposite the first side. The method comprising depositing a silicon layer (104) over a thin dielec...
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| creator | Cousins, Peter J Rim, Seung B Smith, David D |
| description | HYBRID POLYSILICON HETEROJUNCTION BACK CONTACT CELL A method for manufacturing a solar cell (100) comprising a silicon substrate (102). The silicon substrate (102) having a first side and a second side opposite the first side. The method comprising depositing a silicon layer (104) over a thin dielectric layer (106) on the first side and forming a layer of doping material (108) over the silicon layer (104). Forming an oxide layer (110) over the layer of doping material (108); patterning the oxide layer (110), the layer of doping material (108) and the silicon layer (104). The method further comprises growing an oxide layer (112) and raising the temperature to drive the dopants from the layer of doping material (108) into the silicon layer (104) and doping the silicon layer (104) with dopants from the layer of doping material (108) to form a crystallized doped polysilicon layer (150). The method also comprises depositing a wide band gap doped semiconductor (160) and an anti reflective coating (170) on the first side of the solar cell (100) and depositing a wide band gap doped semiconductor (162) and anti-reflective coating (170) on the second side of the solar cell (100). |
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The silicon substrate (102) having a first side and a second side opposite the first side. The method comprising depositing a silicon layer (104) over a thin dielectric layer (106) on the first side and forming a layer of doping material (108) over the silicon layer (104). Forming an oxide layer (110) over the layer of doping material (108); patterning the oxide layer (110), the layer of doping material (108) and the silicon layer (104). The method further comprises growing an oxide layer (112) and raising the temperature to drive the dopants from the layer of doping material (108) into the silicon layer (104) and doping the silicon layer (104) with dopants from the layer of doping material (108) to form a crystallized doped polysilicon layer (150). The method also comprises depositing a wide band gap doped semiconductor (160) and an anti reflective coating (170) on the first side of the solar cell (100) and depositing a wide band gap doped semiconductor (162) and anti-reflective coating (170) on the second side of the solar cell (100).</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171109&DB=EPODOC&CC=AU&NR=2015210421B9$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171109&DB=EPODOC&CC=AU&NR=2015210421B9$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Cousins, Peter J</creatorcontrib><creatorcontrib>Rim, Seung B</creatorcontrib><creatorcontrib>Smith, David D</creatorcontrib><title>Hybrid polysilicon heterojunction back contact cell</title><description>HYBRID POLYSILICON HETEROJUNCTION BACK CONTACT CELL A method for manufacturing a solar cell (100) comprising a silicon substrate (102). The silicon substrate (102) having a first side and a second side opposite the first side. The method comprising depositing a silicon layer (104) over a thin dielectric layer (106) on the first side and forming a layer of doping material (108) over the silicon layer (104). Forming an oxide layer (110) over the layer of doping material (108); patterning the oxide layer (110), the layer of doping material (108) and the silicon layer (104). The method further comprises growing an oxide layer (112) and raising the temperature to drive the dopants from the layer of doping material (108) into the silicon layer (104) and doping the silicon layer (104) with dopants from the layer of doping material (108) to form a crystallized doped polysilicon layer (150). The method also comprises depositing a wide band gap doped semiconductor (160) and an anti reflective coating (170) on the first side of the solar cell (100) and depositing a wide band gap doped semiconductor (162) and anti-reflective coating (170) on the second side of the solar cell (100).</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD2qEwqykxRKMjPqSzOzMlMzs9TyEgtSS3KzyrNSy7JBHKTEpOzFYDiJYnJJQrJqTk5PAysaYk5xam8UJqbQcXNNcTZQze1ID8-tbggMTk1L7Uk3jHUyMDQ1MjQwMTI0MnJ0phIZQBCli4r</recordid><startdate>20171109</startdate><enddate>20171109</enddate><creator>Cousins, Peter J</creator><creator>Rim, Seung B</creator><creator>Smith, David D</creator><scope>EVB</scope></search><sort><creationdate>20171109</creationdate><title>Hybrid polysilicon heterojunction back contact cell</title><author>Cousins, Peter J ; Rim, Seung B ; Smith, David D</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_AU2015210421BB93</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Cousins, Peter J</creatorcontrib><creatorcontrib>Rim, Seung B</creatorcontrib><creatorcontrib>Smith, David D</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Cousins, Peter J</au><au>Rim, Seung B</au><au>Smith, David D</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Hybrid polysilicon heterojunction back contact cell</title><date>2017-11-09</date><risdate>2017</risdate><abstract>HYBRID POLYSILICON HETEROJUNCTION BACK CONTACT CELL A method for manufacturing a solar cell (100) comprising a silicon substrate (102). The silicon substrate (102) having a first side and a second side opposite the first side. The method comprising depositing a silicon layer (104) over a thin dielectric layer (106) on the first side and forming a layer of doping material (108) over the silicon layer (104). Forming an oxide layer (110) over the layer of doping material (108); patterning the oxide layer (110), the layer of doping material (108) and the silicon layer (104). The method further comprises growing an oxide layer (112) and raising the temperature to drive the dopants from the layer of doping material (108) into the silicon layer (104) and doping the silicon layer (104) with dopants from the layer of doping material (108) to form a crystallized doped polysilicon layer (150). The method also comprises depositing a wide band gap doped semiconductor (160) and an anti reflective coating (170) on the first side of the solar cell (100) and depositing a wide band gap doped semiconductor (162) and anti-reflective coating (170) on the second side of the solar cell (100).</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Hybrid polysilicon heterojunction back contact cell |
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