Thin film deposition method

The invention relates to a method for obtaining a substrate coated on at least part of its surface, by at least one layer of an oxide of a metal M having a physical thickness of less than or equal to 30 nm, said oxide layer not being included in a stack of layers comprising at least one layer of sil...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	DURANDEAU, ANNE, NADAUD, NICOLAS, KHARCHENKO, ANDRIY
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL GLASS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL JOINING GLASS TO GLASS OR OTHER MATERIALS METALLURGY MINERAL OR SLAG WOOL PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR RELEVANT APPARATUS TRANSPORTING
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Beschreibung
Zusammenfassung:	The invention relates to a method for obtaining a substrate coated on at least part of its surface, by at least one layer of an oxide of a metal M having a physical thickness of less than or equal to 30 nm, said oxide layer not being included in a stack of layers comprising at least one layer of silver. Said method comprises the following steps: at least one intermediate layer of a material selected from the metal M, a nitride of the metal M, a carbide of the metal M or an oxide sub-stoichiometric in oxygen of the metal M, is deposited by cathodic sputtering, said intermediate layer not being deposited above or below a layer based on titanium oxide, the physical thickness of said intermediate layer being less than or equal to 30 nm; and at least part of the surface of said intermediate layer is oxidised by means of a heat treatment, during which said intermediate layer is in direct contact with an oxidising atmosphere, especially air, the temperature of said substrate not exceeding 150°C during the heat treatment.