METHOD FOR REDUCING CONTACT DEFECTS IN SEMICONDUCTOR CELLS

METHOD FOR REDUCING CONTACT DEFECTS IN SEMICONDUCTOR CELLS

A method and system for providing at least one contact in a semiconductor device. The semiconductor device includes a substrate, an etch stop layer, an interlayer dielectric on the etch stop layer, an anti-reflective coating layer on the interlayer dielectric, and at least one feature below the etch...

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Hauptverfasser: AMY, C. TU, ANGELA, T. HUI, WENMEI LI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator AMY, C. TU
ANGELA, T. HUI
WENMEI LI
description A method and system for providing at least one contact in a semiconductor device. The semiconductor device includes a substrate, an etch stop layer, an interlayer dielectric on the etch stop layer, an anti-reflective coating layer on the interlayer dielectric, and at least one feature below the etch stop layer. A resist mask having an aperture and residing on the anti-reflective coating layer is provided. The aperture is above an exposed portion of the anti-reflective coating layer. The method and system include etching the exposed anti-reflective coating layer and the underlying interlayer dielectric without etching through the etch stop layer, thereby providing a portion of at least one contact hole. The method and system also include removing the resist mask in situ, removing a portion of the etch stop layer exposed in the portion of the contact hole, and filling the contact hole with a conductive material.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD FOR REDUCING CONTACT DEFECTS IN SEMICONDUCTOR CELLS
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