METHOD OF BONDING A PIEZOELECTRIC MATERIAL AND A SUBSTRATE

A method of bonding a piezoelectric material and a substrate having a melting point TSUB comprises the steps of: a) depositing a layer of a first metallic material (M1) having a melting point T1 on a bonding surface of the piezoelectric material; b) depositing a layer of the first metallic material...

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Hauptverfasser: DMITRY GENNADIEVICH GROMOV, YURY NIKOLAEVICH KORKISHKO, VYACHESLOAV ALEXANDROVICH FEDOROV, SERGEI ALEXANDROVICH GAVRILOV, VIKTOR BORISOVICH YAKOVLEV
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creator DMITRY GENNADIEVICH GROMOV
YURY NIKOLAEVICH KORKISHKO
VYACHESLOAV ALEXANDROVICH FEDOROV
SERGEI ALEXANDROVICH GAVRILOV
VIKTOR BORISOVICH YAKOVLEV
description A method of bonding a piezoelectric material and a substrate having a melting point TSUB comprises the steps of: a) depositing a layer of a first metallic material (M1) having a melting point T1 on a bonding surface of the piezoelectric material; b) depositing a layer of the first metallic material (M1) or a layer of a second metallic material (M2) having a melting point T2 which is lower than T1, on a bonding surface of said substrate, wherein the second metallic material (M2) being melted is capable to interact by diffusion with the material (Ml) to form a metallic bond having a melting point T12 which is higher than T2; c) depositing at least one layer of the second metallic material (M2) on the bonding surface of said piezoelectric material and/or substrate; d) bringing said bonding surfaces of the piezoelectric material and the substrate into close contact; and e) heating a place of said contact to a temperature which is higher than T2 but lower than any of the temperatures T12, T1 and TSUB to form the metallic bond.
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b) depositing a layer of the first metallic material (M1) or a layer of a second metallic material (M2) having a melting point T2 which is lower than T1, on a bonding surface of said substrate, wherein the second metallic material (M2) being melted is capable to interact by diffusion with the material (Ml) to form a metallic bond having a melting point T12 which is higher than T2; c) depositing at least one layer of the second metallic material (M2) on the bonding surface of said piezoelectric material and/or substrate; d) bringing said bonding surfaces of the piezoelectric material and the substrate into close contact; and e) heating a place of said contact to a temperature which is higher than T2 but lower than any of the temperatures T12, T1 and TSUB to form the metallic bond.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
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title METHOD OF BONDING A PIEZOELECTRIC MATERIAL AND A SUBSTRATE
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