Method for forming high quality oxide layers of different thickness in one processing step

The present invention relates to a method for forming high quality oxide layers of different thickness over a first and a second semiconductor region in one processing step. The method comprises the steps of: doping the first and the second semiconductor region with a different dopant concentration,...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ROBERTUS T. F. SCHAIJK, YOURI PONOMAREV, JOSINE J. G. P. LOO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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