VORRICHTUNG ZUR PLASMABEHANDLUNG VON SUBSTRATEN IN EINER DURCH HOCHFREQUENZ ANGEREGTEN PLASMAENTLADUNG
Device for the plasma treatment of substrates (7) in a high frequency-excited plasma discharge between two electrodes (3, 8), supplied by a high-frequency source (6). The first electrode is constructed as a hollow anode (3) and the second electrode (8), which carries the substrate (7), is deposited...
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| creator | GEISLER, MICHAEL KIESER, JOERG SELLSCHOPP, MICHAEL |
| description | Device for the plasma treatment of substrates (7) in a high frequency-excited plasma discharge between two electrodes (3, 8), supplied by a high-frequency source (6). The first electrode is constructed as a hollow anode (3) and the second electrode (8), which carries the substrate (7), is deposited in front of the hollow space (10) of the hollow anode or can be passed by this. Moreover, the hollow anode (3) has an edge (9), which is drawn out in the direction of the second electrode (8) and which, relative to the second electrode, forms a gap s1 all around that does not exceed 10 mm in width. In order to form the electrode so that the gap width is not a critical feature, projections (12) are disposed in the hollow space (10) of the hollow anode (3), said projections increasing the internal surface area (11) of the hollow anode (3). Preferably, these projections (12) are constructed as rib structures, which may also assume a honeycomb form. |
| format | Patent |
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The first electrode is constructed as a hollow anode (3) and the second electrode (8), which carries the substrate (7), is deposited in front of the hollow space (10) of the hollow anode or can be passed by this. Moreover, the hollow anode (3) has an edge (9), which is drawn out in the direction of the second electrode (8) and which, relative to the second electrode, forms a gap s1 all around that does not exceed 10 mm in width. In order to form the electrode so that the gap width is not a critical feature, projections (12) are disposed in the hollow space (10) of the hollow anode (3), said projections increasing the internal surface area (11) of the hollow anode (3). Preferably, these projections (12) are constructed as rib structures, which may also assume a honeycomb form.</description><edition>5</edition><language>ger</language><subject>AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; PERFORMING OPERATIONS ; PLASMA TECHNIQUE ; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS ; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS ; SEMICONDUCTOR DEVICES ; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR ; SHAPING OR JOINING OF PLASTICS ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSPORTING ; WORKING OF PLASTICS ; WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL</subject><creationdate>1992</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19920415&DB=EPODOC&CC=AT&NR=E73961T1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19920415&DB=EPODOC&CC=AT&NR=E73961T1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GEISLER, MICHAEL</creatorcontrib><creatorcontrib>KIESER, JOERG</creatorcontrib><creatorcontrib>SELLSCHOPP, MICHAEL</creatorcontrib><title>VORRICHTUNG ZUR PLASMABEHANDLUNG VON SUBSTRATEN IN EINER DURCH HOCHFREQUENZ ANGEREGTEN PLASMAENTLADUNG</title><description>Device for the plasma treatment of substrates (7) in a high frequency-excited plasma discharge between two electrodes (3, 8), supplied by a high-frequency source (6). The first electrode is constructed as a hollow anode (3) and the second electrode (8), which carries the substrate (7), is deposited in front of the hollow space (10) of the hollow anode or can be passed by this. Moreover, the hollow anode (3) has an edge (9), which is drawn out in the direction of the second electrode (8) and which, relative to the second electrode, forms a gap s1 all around that does not exceed 10 mm in width. In order to form the electrode so that the gap width is not a critical feature, projections (12) are disposed in the hollow space (10) of the hollow anode (3), said projections increasing the internal surface area (11) of the hollow anode (3). Preferably, these projections (12) are constructed as rib structures, which may also assume a honeycomb form.</description><subject>AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>PERFORMING OPERATIONS</subject><subject>PLASMA TECHNIQUE</subject><subject>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</subject><subject>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR</subject><subject>SHAPING OR JOINING OF PLASTICS</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSPORTING</subject><subject>WORKING OF PLASTICS</subject><subject>WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1992</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjcEKgkAURWfTIqp_eD_gQoSi5TjznBHsWc83LtyIxLiKEuz_SakPaHXhcDh3q8a2Zi6Nl0AOusBwrXRz0Tl6TbZaYVsTNCFvhLUgQUmAJSGDDWw8-Nr4gvEWkDrQ5JDRrdo3gySVtktlrzbj8Jjj4bc7BQWK8UmcXn2cp-Een_HdLw-n7HxMRdLsD-UDy-82Aw</recordid><startdate>19920415</startdate><enddate>19920415</enddate><creator>GEISLER, MICHAEL</creator><creator>KIESER, JOERG</creator><creator>SELLSCHOPP, MICHAEL</creator><scope>EVB</scope></search><sort><creationdate>19920415</creationdate><title>VORRICHTUNG ZUR PLASMABEHANDLUNG VON SUBSTRATEN IN EINER DURCH HOCHFREQUENZ ANGEREGTEN PLASMAENTLADUNG</title><author>GEISLER, MICHAEL ; KIESER, JOERG ; SELLSCHOPP, MICHAEL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_ATE73961TT13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>ger</language><creationdate>1992</creationdate><topic>AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>PERFORMING OPERATIONS</topic><topic>PLASMA TECHNIQUE</topic><topic>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</topic><topic>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR</topic><topic>SHAPING OR JOINING OF PLASTICS</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSPORTING</topic><topic>WORKING OF PLASTICS</topic><topic>WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL</topic><toplevel>online_resources</toplevel><creatorcontrib>GEISLER, MICHAEL</creatorcontrib><creatorcontrib>KIESER, JOERG</creatorcontrib><creatorcontrib>SELLSCHOPP, MICHAEL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GEISLER, MICHAEL</au><au>KIESER, JOERG</au><au>SELLSCHOPP, MICHAEL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>VORRICHTUNG ZUR PLASMABEHANDLUNG VON SUBSTRATEN IN EINER DURCH HOCHFREQUENZ ANGEREGTEN PLASMAENTLADUNG</title><date>1992-04-15</date><risdate>1992</risdate><abstract>Device for the plasma treatment of substrates (7) in a high frequency-excited plasma discharge between two electrodes (3, 8), supplied by a high-frequency source (6). The first electrode is constructed as a hollow anode (3) and the second electrode (8), which carries the substrate (7), is deposited in front of the hollow space (10) of the hollow anode or can be passed by this. Moreover, the hollow anode (3) has an edge (9), which is drawn out in the direction of the second electrode (8) and which, relative to the second electrode, forms a gap s1 all around that does not exceed 10 mm in width. In order to form the electrode so that the gap width is not a critical feature, projections (12) are disposed in the hollow space (10) of the hollow anode (3), said projections increasing the internal surface area (11) of the hollow anode (3). Preferably, these projections (12) are constructed as rib structures, which may also assume a honeycomb form.</abstract><edition>5</edition><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PERFORMING OPERATIONS PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR SHAPING OR JOINING OF PLASTICS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL |
| title | VORRICHTUNG ZUR PLASMABEHANDLUNG VON SUBSTRATEN IN EINER DURCH HOCHFREQUENZ ANGEREGTEN PLASMAENTLADUNG |
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